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EN29SL800B-90MIP 参数 Datasheet PDF下载

EN29SL800B-90MIP图片预览
型号: EN29SL800B-90MIP
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1024K ×8位/ 512K ×16位)闪存引导扇区快闪记忆体, CMOS 1.8伏只 [8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 43 页 / 337 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29SL800  
Revisions List  
Revision No Description  
Date  
A
B
Initial Release  
2005/06/15  
2006/04/14  
1
Change the FBGA package dimension to  
enhance the BGA substrate and ball strength  
i. Package Thickness A : 1.10 mm to 1.31 mm  
ii. Ball size b : 0.3 mm to 0.4 mm  
TSOP package dimension change  
R from 0.08 mm max. to 0.08~0.20 mm  
Remove ,Unlock Bypass, Unlock Bypass  
Program, and Unlock Bypass Reset, commands  
from Table 9.  
2
3
4
5
Remove description of Unlock Bypass  
Remove regulated voltage version and  
description  
6
7
Correct manufacturer-id value in table 5, page 11  
Modify test condition parameters in page 24,27  
for 70ns read operation  
i. Vcc=1.7-2.2 V  
ii. Output Load 15pF  
iii. Input / Output reference level 1/2 Vcc  
C
D
1. Added WFBGA package option in page 1  
2. Added WFBGA connection diagram in page 3  
3. Added Figure 16 of WFBGA drawing in page 39  
4. Added package code M for WFBGA in page 41  
5. Changed typical active read current from 7 to 15  
mA in page 1  
2006/09/07  
2006/11/06  
6. Changed ICC1 typical from 7 to 15 mA;  
ICC1 max from 15 to 30 mA in Table 7 of page 24  
1. Added WLGA package option in page 1  
2. Added WLGA connection diagram in page 3  
3. Added Figure 17 of WLGA drawing in page 40  
4. Added package code K for WLGA in page 42  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
43  
Rev. D, Issue Date: 2006/11/06  
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