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EN29SL800B-90MIP 参数 Datasheet PDF下载

EN29SL800B-90MIP图片预览
型号: EN29SL800B-90MIP
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1024K ×8位/ 512K ×16位)闪存引导扇区快闪记忆体, CMOS 1.8伏只 [8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 43 页 / 337 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29SL800  
Figure 12. Sector Protect/Unprotect Timing Diagram  
VID  
Vcc  
RESET#  
0V  
0V  
tVIDR  
tVIDR  
SA,  
A6,A1,A0  
Valid  
Valid  
Valid  
Data  
60h  
60h  
40h  
Status  
Sector Protect/Unprotect  
Verify  
CE#  
>0.4μS  
WE#  
>1μS  
Sector Protect: 150 uS  
Sector Unprotect: 15 mS  
OE#  
Notes:  
Use standard microprocessor timings for this device for read and write cycles.  
For Sector Protect, use A6=0, A1=1, A0=0. For Sector Unprotect, use A6=1, A1=1, A0=0.  
Temporary Sector Unprotect  
Speed Option  
-70 -90  
Unit  
Parameter  
Std  
Description  
tVIDR  
tRSP  
VID Rise and Fall Time  
Min  
Min  
500  
4
ns  
µs  
RESET# Setup Time for Temporary  
Sector Unprotect  
Figure 13. Temporary Sector Unprotect Timing Diagram  
VID  
RESET#  
0 or 2 V  
0 or 2 V  
tVIDR  
tVIDR  
CE#  
WE#  
tRSP  
RY/BY#  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
36  
Rev. D, Issue Date: 2006/11/06  
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