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EN29SL800B-90MIP 参数 Datasheet PDF下载

EN29SL800B-90MIP图片预览
型号: EN29SL800B-90MIP
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1024K ×8位/ 512K ×16位)闪存引导扇区快闪记忆体, CMOS 1.8伏只 [8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 43 页 / 337 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29SL800  
ORDERING INFORMATION  
EN29SL800  
T
-
70  
T
C
P
PACKAGING CONTENT  
(Blank) = Conventional  
P = Pb Free  
TEMPERATURE RANGE  
C = Commercial (0°C to +70°C)  
I = Industrial (-40°C to +85°C)  
PACKAGE  
T = 48-pin TSOP  
B = 48-Ball Fine Pitch Ball Grid Array (FBGA)  
0.80mm pitch, 6mm x 8mm package  
M = 48-Ball Very-Very-Thin-Profile Fine Pitch  
Ball Grid Array (WFBGA)  
0.50mm pitch, 5mm x 6mm package  
K = 48-Ball Very-Very-Thin-Profile Fine Pitch  
Land Grid Array (WLGA)  
SPEED  
70 = 70ns  
90 = 90ns  
BOOT CODE SECTOR ARCHITECTURE  
T = Top Sector  
B = Bottom Sector  
BASE PART NUMBER  
EN = Eon Silicon Solution Inc.  
29SL = FLASH, 1.8V Read Program Erase  
800 = 8 Megabit (1024K x 8 / 512K x 16)  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
42  
Rev. D, Issue Date: 2006/11/06  
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