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EN29LV400AB-70TI 参数 Datasheet PDF下载

EN29LV400AB-70TI图片预览
型号: EN29LV400AB-70TI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8位/ 256K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 41 页 / 378 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV400A  
ORDERING INFORMATION  
EN29LV400A  
T
70  
T
C
P
PACKAGING CONTENT  
(Blank) = Conventional  
P = Pb Free  
TEMPERATURE RANGE  
C = Commercial (0°C to +70°C)  
I = Industrial (-40°C to +85°C)  
PACKAGE  
T = 48-pin TSOP  
B = 48-ball Fine Pitch Ball Grid Array (FBGA)  
0.80mm pitch, 6mm x 8mm package  
SPEED  
45R = 45ns Regulated range 3.0V~3.6V  
55R = 55ns Regulated range 3.0V~3.6V  
70 = 70ns  
90 = 90ns  
BOOT CODE SECTOR ARCHITECTURE  
T = Top Sector  
B = Bottom Sector  
BASE PART NUMBER  
EN = Eon Silicon Solution Inc.  
29LV = FLASH, 3V Read Program Erase  
400 = 4 Megabit (512K x 8 / 256K x 16)  
A = Version Identifier  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
40  
Rev. A, Issue Date: 2005/01/07  
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