EN29LV320A
DC Characteristics
Table 11. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Parameter
Test Conditions
0V≤ V ≤ Vcc
Min
Typ
Max
±5
Unit
µA
Input Leakage Current
I
LI
IN
Output Leakage Current
±5
µA
I
0V≤ V
≤ Vcc
OUT
LO
Active Read Current ( Byte mode )
Active Read Current ( Word mode )
9
9
16
mA
mA
CE# = V ; OE# = V
IL
IH ;
I
I
I
CC1
f = 5MHZ
16
CE# = V , OE# = V
IL IH
,
20
1
30
5.0
5.0
mA
µA
CC2
CC3
Supply Current (Program or Erase)
Supply Current (Standby - CMOS)
WE# = V
IL
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
RESET# = Vss ± 0.3V
1
1
µA
uA
I
I
CC4
CC5
Reset Current
V
= Vcc ± 0.3V
= Vss ± 0.3V
IH
5.0
0.8
Automatic Sleep Mode
Input Low Voltage
Input High Voltage
V
IL
-0.5
V
V
V
IL
0.7 x
Vcc
Vcc ±
0.3
V
IH
#WP/ACC Voltage (Write Protect /
Program Acceleration)
Voltage for Autoselect or
10.5
10.5
11.5
V
V
HH
11.5
0.45
V
V
V
V
ID
Temporary Sector Unprotect
Output Low Voltage
V
I
= 4.0 mA
= -2.0 mA
OL
OL
0.85 x
Vcc
Vcc -
0.4V
Output High Voltage TTL
I
OH
OH
V
OH
Output High Voltage CMOS
V
V
I
= -100 μA,
Supply voltage (Erase and
Program lock-out)
V
LKO
2.3
2.5
Notes:
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
they draw power if not at full CMOS supply voltages.
2. Maximum ICC specifications are tested with Vcc = Vcc max.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
32
Rev. B, Issue Date: 2007/07/17
EON [ EON SILICON SOLUTION INC. ]
