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EN29LV320AB-70BIP 参数 Datasheet PDF下载

EN29LV320AB-70BIP图片预览
型号: EN29LV320AB-70BIP
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4096K ×8位/ 2048K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存存储
文件页数/大小: 49 页 / 411 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV320A  
Flowchart 7a. In-System Sector (Group) Protect Flowchart  
START  
PLSCNT = 1  
RESET# = VID  
Wait 1 μs  
No  
First Write  
Cycle =  
60h?  
Temporary Chip  
Unprotect Mode  
Yes  
Set up sector  
(group) address  
To Protect: Write 60h to  
sector addr with  
A6 = 0, A1 = 1, A0 = 0  
Wait 150 μs  
To Verify: Write 40h to  
sector(group) address  
with  
A6 = 0, A1 = 1, A0 = 0  
Increment  
PLSCNT  
Reset  
PLSCNT = 1  
Wait 0.4 μs  
Read from sector  
address with  
A6 = 0, A1 = 1, A0  
No  
No  
Data = 01h?  
Yes  
PLSCNT = 25?  
Yes  
Device failed  
Yes  
Protect another  
sector?  
No  
Remove VID  
from RESET#  
Write reset  
command  
Sector Protect Algorithm  
Sector Protect  
complete  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
29  
Rev. B, Issue Date: 2007/07/17  
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