Preliminary EN29GL064
Table 15. DC Characteristics
(Ta = - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Parameter
Test Conditions
0V≤ VIN ≤ Vcc
Min
Typ
Max
Unit
Input Leakage Current
±5
µA
I
LI
A9, OE#, RESET#
Input Load Current
µA
VCC = VCC max; VID= 11.5 V
35
I
LIT
Output Leakage Current
±1
30
45
µA
mA
mA
0V≤ VOUT ≤ Vcc
I
LO
5MHz
20
30
CE# = VIL; OE# = VIH ;
VCC = VCC max
VCC Active Read Current
I
I
CC1
10MHz
CE# = VIL , OE# = VIH , VCC
VCCmax, f = 10 MHz
CE# = VIL , OE# = VIH , VCC
VCCmax, f = 33 MHz
=
1
5
10
15
30
VCC Intra-Page Read
Current
mA
CC2
=
VCC Active Erase/
Program Current
CE# = VIL , OE# = VIH , VCC = VCCmax
20
mA
µA
I
I
CC3
CE#, RESET# = VCC ± 0.3 V,
OE# = VIH , VCC = VCC max
VIL = Vss + 0.3 V/-0.1V,
VCC Standby Current
VCC Reset Current
1
5.0
CC4
RESET# = Vss ± 0.3V
1
1
5.0
5.0
µA
I
I
CC5
VIH = Vcc ± 0.3V
VIL = Vss ± 0.3V
µA
V
CC6
Automatic Sleep Mode
Input Low Voltage
0.3 x
VIO
-0.5
V
IL
0.7 x
VIO
VIO +
0.3
Input High Voltage
V
V
IH
Acceleration Program
Voltage
10.5
11.5
V
V
HH
Voltage for Autoselect or
Temporary Sector
Unprotect
10.5
11.5
V
V
V
V
ID
OL
OH
0.15 x
VIO
IOL = 100
A
Output Low Voltage
V
Output High Voltage
CMOS
0.85 x
VIO
IOH = -100
A
V
Supply voltage (Erase and
Program lock-out)
V
2.3
2.5
V
LKO
Notes:
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they draw power if not
at full CMOS supply voltages.
2. Maximum ICC specifications are tested with Vcc = Vcc max.
3. Not 100% tested.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
46
Rev. A, Issue Date: 2009/3/20