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EN29GL064B-70BIP 参数 Datasheet PDF下载

EN29GL064B-70BIP图片预览
型号: EN29GL064B-70BIP
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8192K ×8位/ 4096K ×16位)闪存 [64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory]
分类和应用: 闪存
文件页数/大小: 66 页 / 3236 K
品牌: EON [ EON SILICON SOLUTION INC. ]
 浏览型号EN29GL064B-70BIP的Datasheet PDF文件第40页浏览型号EN29GL064B-70BIP的Datasheet PDF文件第41页浏览型号EN29GL064B-70BIP的Datasheet PDF文件第42页浏览型号EN29GL064B-70BIP的Datasheet PDF文件第43页浏览型号EN29GL064B-70BIP的Datasheet PDF文件第45页浏览型号EN29GL064B-70BIP的Datasheet PDF文件第46页浏览型号EN29GL064B-70BIP的Datasheet PDF文件第47页浏览型号EN29GL064B-70BIP的Datasheet PDF文件第48页  
Preliminary EN29GL064  
Table 14-1. EN29GL064 Command Definitions  
Bus Cycles  
Command  
Sequence  
1st  
Addr  
P
Cycle  
2nd  
P
Cycle  
3rd  
P
Cycle  
4th  
P
Cycle  
5th  
Addr Data  
P
Cycle  
6th  
Addr  
P
Cycle  
Data  
P
P
P
P
P
P
Data Addr  
Data Addr  
Data Addr Data  
Read  
Reset  
1
1
RA  
RD  
XXX  
555  
F0  
000  
100  
000  
200  
7F  
Word  
Byte  
2AA  
AA  
555  
55  
Manufacturer  
ID  
1C  
7F  
1C  
4
90  
AAA  
555  
AAA  
Device ID  
Uniform  
Word  
Byte  
555  
AAA  
2AA  
AA  
555  
AAA  
X01 227E X0E 220C  
7E  
X0F  
X1E  
2201  
01  
4
4
55  
55  
90  
90  
555  
X02  
X01 227E X0E 2210  
7E  
X1C  
0C  
Device ID  
Top Boot  
Word  
555  
2AA  
AA  
555  
X0F  
2201  
Byte  
Word  
Byte  
AAA  
555  
555  
AAA  
555  
X02  
X1C  
10  
X1E  
X0F  
X1E  
01  
2200  
00  
2AA  
AA  
X01 227E X0E 2210  
Device ID  
Bottom Boot  
4
4
4
55  
55  
90  
90  
7E  
00  
01  
00  
01  
AAA  
555  
AAA  
X02  
X1C  
10  
(SA)  
X02  
(SA)  
X04  
Word  
Byte  
555  
2AA  
AA  
555  
Sector Protect  
Verify  
AAA  
555  
AAA  
Word  
Byte  
555  
AAA  
555  
SA  
2AA  
AA  
555  
AAA  
SA  
Program  
Write to Buffer  
55  
55  
A0  
25  
PA  
SA  
PD  
555  
WBL  
6
1
3
AA  
29  
2AA  
WC  
PA  
PD  
PD  
Program Buffer to Flash  
Write to Buffer Abort Reset  
555  
555  
AA  
2AA  
2AA  
55  
55  
555  
555  
F0  
80  
Word  
555  
2AA  
555  
Chip Erase  
6
6
AA  
AA  
AA  
AA  
55  
55  
10  
30  
Byte  
Word  
Byte  
AAA  
555  
AAA  
555  
2AA  
555  
AAA  
555  
AAA  
AAA  
555  
AAA  
555  
2AA  
555  
AAA  
Sector Erase  
55  
80  
SA  
Sector Erase Suspend  
Sector Erase Resume  
1
1
XXX  
B0  
30  
XXX  
55  
Word  
Byte  
CFI Query  
1
2
98  
A0  
AA  
XX  
Accelerated Program  
PA  
PD  
Legend  
X = Don’t care  
RA = Address of the memory to be read.  
RD = Data read from location RA during read operation.  
PA = Address of the memory location to be programmed. Addresses latch on  
the falling edge of the WE# or CE# pulse, whichever happens later.  
PD = Data to be programmed at location PA. Data latches on the rising edge  
of the WE# or CE# pulse, whichever happens first.  
SA = Address of the sector to be verified (in autoselect mode) or erased.  
Address bits Amax–A16 uniquely select any sector.  
WBL = Write Buffer Location. The address must be within the same write  
buffer page as PA.  
WC = Word Count is the number of write buffer locations to load minus 1.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.eonssi.com  
44  
Rev. A, Issue Date: 2009/3/20  
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