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EN29F010-70SIP 参数 Datasheet PDF下载

EN29F010-70SIP图片预览
型号: EN29F010-70SIP
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8位), 5V闪存 [1 Megabit (128K x 8-bit) 5V Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 35 页 / 428 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29F010  
DATA PROTECTION  
Power-up Write Inhibit  
During power-up, the device automatically resets to READ mode and locks out write cycles. Even  
with  
W E  
= V ,  
= VIL and  
= VIH, the device will not accept commands on the rising edge of  
OE  
CE  
.
WE  
IL  
Low VCC Write Inhibit  
During VCC power-up or power-down, the EN29F010 locks out write cycles to protect against any  
unintentional writes. If VCC < VLOK, the command register is disabled and all internal program or  
erase circuits are disabled. Under this condition, the device will reset to the READ mode.  
Subsequent writes will be ignored until VCC > VLKO.  
Write “Noise” Pulse Protection  
Noise pulses less than 5ns on  
command register.  
,
or  
will neither initiate a write cycle nor change the  
WE  
OE CE  
Logical Inhibit  
If  
=V or  
=V , writing is inhibited. To initiate a write cycle,  
and  
must be a logical  
W E  
CE  
WE  
,
CE  
are all logical zero (not recommended usage), it will be considered a  
IH  
IH  
“zero”. If  
, and  
CE  
OE  
W E  
write.  
Sector Protect and Unprotect  
The hardware sector protection feature disables both program and erase operations in any sector.  
The hardware sector unprotection feature re-enables both program and erase operation in  
previously protected sectors.  
Sector protection/unprotection must be implemented using programming equipment. The procedure  
requires a high voltage (VID) on address pin A9 and the control pins. Contact Eon Silicon Solution,  
Inc. for an additional supplement on this feature.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2003 Eon Silicon Solution, Inc., www.essi.com.tw  
14  
Rev. A, Issue Date: 2003/10/20  
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