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EN29F010-70SIP 参数 Datasheet PDF下载

EN29F010-70SIP图片预览
型号: EN29F010-70SIP
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8位), 5V闪存 [1 Megabit (128K x 8-bit) 5V Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 35 页 / 428 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29F010  
WRITE OPERATION STATUS  
DQ7  
DATA
Polling  
The EN29F010 provides  
Polling on DQ7 to indicate to the host system the status of the  
DATA  
embedded operations. The  
Polling feature is active during the Byte Programming, Sector  
DATA  
Erase, Chip Erase, and Erase Suspend. (See Table 6)  
When the Byte Programming is in progress, an attempt to read the device will produce the  
complement of the data last written to DQ7. Upon the completion of the Byte Programming, an  
attempt to read the device will produce the true data last written to DQ7. For the Byte Programming,  
polling is valid after the rising edge of the fourth  
or  
WE  
pulse in the four-cycle sequence.  
CE  
DATA  
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the  
DQ7 output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7  
output during the read. For Chip Erase, the  
polling is valid after the rising edge of the sixth  
DATA  
pulse in the six-cycle sequence. For Sector Erase, polling is valid after the last  
DATA  
or  
W E  
CE  
rising edge of the sector erase  
or  
pulse.  
CE  
W E  
Polling must be performed at any address within a sector that is being programmed or  
DATA  
erased and not a protected sector. Otherwise,  
polling may give an inaccurate result if the  
DATA  
address used is in a protected sector.  
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when  
the output enable (  
) is low. This means that the device is driving status information on DQ7 at  
OE  
one instant of time and valid data at the next instant of time. Depending on when the system  
samples the DQ7 output, it may read the status of valid data. Even if the device has completed the  
embedded operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid.  
The valid data on DQ0-DQ7 will be read on the subsequent read attempts.  
The flowchart for  
Polling (DQ7) is shown on Flowchart 5. The  
Polling (DQ7) timing  
DATA  
DATA  
diagram is shown in Figure 8.  
DQ6  
Toggle Bit I  
The EN29F010 provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the  
embedded programming and erase operations. (See Table 6)  
During an embedded Program or Erase operation, successive attempts to read data from the device  
at any address (by toggling  
or  
) will result in DQ6 toggling between “zero” and “one”. Once  
CE  
OE  
the embedded Program or Erase operation is complete, DQ6 will stop toggling and valid data will be  
read on the next successive attempts. During Byte Programming, the Toggle Bit is valid after the  
rising edge of the fourth  
pulse in the four-cycle sequence. For Chip Erase, the Toggle Bit is  
WE  
valid after the rising edge of the sixth-cycle sequence. For Sector Erase, the Toggle Bit is valid after  
the last rising edge of the Sector Erase  
erase time-out window.  
pulse. The Toggle Bit is also active during the sector  
W E  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2003 Eon Silicon Solution, Inc., www.essi.com.tw  
11  
Rev. A, Issue Date: 2003/10/20  
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