EN29F010
EN29F010
1 Megabit (128K x 8-bit) 5V Flash Memory
FEATURES
• JEDEC Standard program and erase
• 5.0V operation for read/write/erase
commands
operations
• JEDEC standard
polling and toggle
DATA
• Fast Read Access Time
bits feature
- 45ns, 55ns, 70ns, and 90ns
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Sector Architecture:
- 8 uniform sectors of 16Kbytes each
- Supports full chip erase
• Embedded Erase and Program Algorithms
- Individual sector erase supported
- Sector protection:
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
Hardware locking of sectors to prevent
program or erase operations within
individual sectors
• 0.23 µm triple-metal double-poly
triple-well CMOS Flash Technology
• High performance program/erase speed
- Byte program time: 7µs typical
- Sector erase time: 300ms typical
- Chip erase time: 3s typical
• Low Vcc write inhibit < 3.2V
• 100K endurance cycle
• Package Options
• Low Standby Current
- 32-pin PDIP
- 1µA CMOS standby current-typical
- 1mA TTL standby current
- 32-pin PLCC
• Low Power Active Current
- 32-pin 8mm x 20mm TSOP (Type 1)
- 32-pin 8mm x 14mm TSOP (Type 1)
- 12mA typical active read current
- 30mA program/erase current
• Commercial and Industrial Temperature
Ranges
GENERAL DESCRIPTION
The EN29F010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 128K bytes with 8 bits per byte, the 1M of memory is arranged in eight uniform
sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F010 features
5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for
WAIT states in high-performance microprocessor systems.
The EN29F010 has separate Output Enable (
), Chip Enable (
), and Write Enable (
)
W E
OE
CE
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
1
or modifications due to changes in technical specifications.
EON [ EON SILICON SOLUTION INC. ]
