欢迎访问ic37.com |
会员登录 免费注册
发布采购

EN29F010-70SIP 参数 Datasheet PDF下载

EN29F010-70SIP图片预览
型号: EN29F010-70SIP
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8位), 5V闪存 [1 Megabit (128K x 8-bit) 5V Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 35 页 / 428 K
品牌: EON [ EON SILICON SOLUTION INC. ]
 浏览型号EN29F010-70SIP的Datasheet PDF文件第4页浏览型号EN29F010-70SIP的Datasheet PDF文件第5页浏览型号EN29F010-70SIP的Datasheet PDF文件第6页浏览型号EN29F010-70SIP的Datasheet PDF文件第7页浏览型号EN29F010-70SIP的Datasheet PDF文件第9页浏览型号EN29F010-70SIP的Datasheet PDF文件第10页浏览型号EN29F010-70SIP的Datasheet PDF文件第11页浏览型号EN29F010-70SIP的Datasheet PDF文件第12页  
EN29F010  
Table 5. EN29F010 Command Definitions  
1st  
2nd  
3rd  
4th  
5th  
6th  
Command  
Write  
Write Cycle  
Sequence  
Write Cycle  
Write Cycle  
Write Cycle  
Write Cycle Write Cycle  
Cycles  
Req’d  
Read/Reset  
Addr Data  
RA RD  
XXXh F0h  
555h AAh 2AAh 55h 555h F0h  
555h AAh 2AAh 55h 555h 90h  
555h AAh 2AAh 55h 555h 90h  
555h AAh 2AAh 55h 555h 90h  
555h AAh 2AAh 55h 555h A0h  
555h AAh 2AAh 55h 555h 80h 555h AAh 2AAh 55h 555h 10h  
555h AAh 2AAh 55h 555h 80h 555h AAh 2AAh 55h  
xxxh B0h  
xxxh 30h  
Addr  
Data Addr Data Addr Data Addr Data Addr Data  
1
1
4
Read  
Reset  
Read/Reset  
RA  
RD  
000h/ 7Fh/  
AutoSelect  
Manufacturer ID  
AutoSelect Device ID  
4
4
4
100h 1Ch  
01h  
20h  
BA & 00h/  
AutoSelect Sector  
Protect Verify  
02h  
PA  
01h  
PD  
4
6
6
1
1
Byte Program  
Chip Erase  
Sector Erase  
BA  
30h  
Sector Erase Suspend  
Sector Erase Resume  
Notes:  
RA = Read Address: address of the memory location to be read. This one is a read cycle.  
RD = Read Data: data read from location RA during Read operation. This one is a read cycle.  
PA = Program Address: address of the memory location to be programmed  
PD = Program Data: data to be programmed at location PA  
BA = Sector Address: address of the Sector to be erased. Address bits A16-A14 uniquely select any Sector.  
The data is 00h for an unprotected sector and 01h for a protected sector.  
Byte Programming Command  
Programming the EN29F010 is performed on a byte-by-byte basis using a four bus-cycle operation  
(two unlock write cycles followed by the Program Setup command and Program Data Write cycle).  
When the program command is executed, no additional CPU controls or timings are necessary. An  
internal timer terminates the program operation automatically. Address is latched on the falling edge  
of  
or  
, whichever is last; data is latched on the rising edge of  
or  
CE  
, whichever is first.  
W E  
CE  
W E  
The program operation is completed when EN29F010 returns the equivalent data to the  
programmed location.  
Programming status may be checked by sampling data on DQ7 (  
polling) or on DQ6 (toggle  
DATA  
bit). Changing data from 0 to 1 requires an erase operation. When programming time limit is  
exceeded, DQ5 will produce a logical “1” and a Reset command can return the device to Read  
mode.  
Chip Erase Command  
Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two  
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the  
chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require  
the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and  
verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required  
to provide any controls or timings during these operations. The Command Definitions table shows the  
address and data requirements for the chip erase command sequence.  
This Data Sheet may be revised by subsequent versions  
©2003 Eon Silicon Solution, Inc., www.essi.com.tw  
Rev. A, Issue Date: 2003/10/20  
8
or modifications due to changes in technical specifications.