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EN25Q16A-104HIP 参数 Datasheet PDF下载

EN25Q16A-104HIP图片预览
型号: EN25Q16A-104HIP
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存与4K字节扇区制服 [16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 53 页 / 1059 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25Q16A  
Write Enable (WREN) (06h)  
The Write Enable (WREN) instruction (Figure 7) sets the Write Enable Latch (WEL) bit. The Write  
Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase  
(BE), Chip Erase (CE) and Write Status Register (WRSR) instruction.  
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the  
instruction code, and then driving Chip Select (CS#) High.  
The instruction sequence is shown in Figure 8.1 while using the Enable Quad Peripheral Interface mode  
(EQPI) (38h) command.  
Figure 7. Write Enable Instruction Sequence Diagram  
Write Disable (WRDI) (04h)  
The Write Disable instruction (Figure 8) resets the Write Enable Latch (WEL) bit in the Status Register  
to a 0 or exit from OTP mode to normal mode. The Write Disable instruction is entered by driving Chip  
Select (CS#) low, shifting the instruction code “04h” into the DI pin and then driving Chip Select (CS#)  
high. Note that the WEL bit is automatically reset after Power-up and upon completion of the Write  
Status Register, Page Program, Sector Erase, Block Erase (BE) and Chip Erase instructions.  
The instruction sequence is shown in Figure 8.1 while using the Enable Quad Peripheral Interface mode  
(EQPI) (38h) command.  
Figure 8. Write Disable Instruction Sequence Diagram  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
16  
Rev. E, Issue Date: 2011/07/14