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EN25P05-100GI 参数 Datasheet PDF下载

EN25P05-100GI图片预览
型号: EN25P05-100GI
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的统一部门,串行闪存 [512 Kbit Uniform Sector, Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 30 页 / 377 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25P05  
16. The Device ID value for the EN25P05 are listed in Table 5. The Device ID can be read continuously.  
The instruction is completed by driving CS# high.  
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was  
not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If  
the device was previously in the Deep Power-down mode, though, the transition to the Standby Power  
mode is delayed by t  
, and Chip Select (CS#) must remain High for at least t  
(max), as specified  
RES2  
RES2  
in Table 10. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive,  
decode and execute instructions.  
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep  
Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device ID of the  
device, and can be applied even if the Deep Power-down mode has not been entered.  
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program or  
Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in  
progress.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
17  
Rev. B, Issue Date: 2006/12/27  
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