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EN25P05-100GI 参数 Datasheet PDF下载

EN25P05-100GI图片预览
型号: EN25P05-100GI
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的统一部门,串行闪存 [512 Kbit Uniform Sector, Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 30 页 / 377 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25P05  
Bulk Erase (BE) (C7h)  
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable  
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction  
has been decoded, the device sets the Write Enable Latch (WEL).  
The Bulk Erase (BE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction  
code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire duration of the  
sequence.  
The instruction sequence is shown in Figure 13.. Chip Select (CS#) must be driven High after the eighth  
bit of the instruction code has been latched in, otherwise the Bulk Erase instruction is not executed. As  
soon as Chip Select (CS#) is driven High, the self-timed Bulk Erase cycle (whose duration is t ) is  
BE  
initiated. While the Bulk Erase cycle is in progress, the Status Register may be read to check the value of  
the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk Erase cycle,  
and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable  
Latch (WEL) bit is reset.  
The Bulk Erase (BE) instruction is executed only if all Block Protect (BP1, BP0) bits are 0. The Bulk Erase  
(BE) instruction is ignored if one, or more, sectors are protected.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
15  
Rev. B, Issue Date: 2006/12/27