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EN25D16-100HI 参数 Datasheet PDF下载

EN25D16-100HI图片预览
型号: EN25D16-100HI
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存 [16 Megabit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 37 页 / 483 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25D16  
Table 8. DC Characteristics  
(Ta = - 40°C to 85°C; VCC = 2.7-3.6V)  
Symbol  
Parameter  
Test Conditions  
Min.  
Max.  
Unit  
I
Input Leakage Current  
± 2  
µA  
LI  
I
Output Leakage Current  
Standby Current  
± 2  
5
µA  
µA  
µA  
LO  
I
CS# = V , V = V  
CC IN  
CS# = V , V = V  
CC IN  
or V  
or V  
at  
CC1  
SS  
SS  
CC  
CC  
I
Deep Power-down Current  
5
CC2  
CLK = 0.1 V  
/ 0.9 V  
CC  
CC  
25  
20  
mA  
mA  
100MHz, Q = open  
CLK = 0.1 V / 0.9 V  
I
Operating Current (READ)  
CC3  
at  
CC CC  
75MHz, Q = open  
I
Operating Current (PP)  
Operating Current (WRSR)  
Operating Current (SE)  
Operating Current (BE)  
CS# = V  
CC  
CS# = V  
CC  
CS# = V  
CC  
CS# = V  
CC  
15  
15  
15  
15  
mA  
mA  
mA  
mA  
CC4  
I
CC5  
I
CC6  
I
CC7  
V
0.2 V  
CC  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
– 0.5  
0.7V  
V
V
V
V
IL  
V
V +0.4  
CC  
IH  
CC  
V
I
I
= 1.6 mA  
0.4  
OL  
OL  
V
= –100 µA  
V
-0.2  
OH  
OH  
CC  
Table 9. AC Measurement Conditions  
Symbol  
Parameter  
Min.  
Max.  
Unit  
Load Capacitance  
20/30  
pF  
ns  
V
CL  
Input Rise and Fall Times  
5
Input Pulse Voltages  
0.2VCC to 0.8VCC  
0.3VCC to 0.7VCC  
Input Timing Reference Voltages  
Output Timing Reference Voltages  
V
V
VCC / 2  
Notes:  
1.  
CL = 20 pF when CLK=100MHz, CL = 30 pF when CLK=75MHz,  
Figure 23. AC Measurement I/O Waveform  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
26  
Rev. B, Issue Date: 2008/06/23  
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