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EN25D16-100HI 参数 Datasheet PDF下载

EN25D16-100HI图片预览
型号: EN25D16-100HI
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存 [16 Megabit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 37 页 / 483 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25D16  
Figure 17. Release Power-down Instruction Sequence Diagram  
Figure 18. Release Power-down / Device ID Instruction Sequence Diagram  
Read Manufacturer / Device ID (90h)  
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down /  
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific  
device ID.  
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down /  
Device ID instruction. The instruction is initiated by driving the CS# pin low and shifting the  
instruction code “90h” followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufac-  
turer ID for Eon (1Ch) and the Device ID are shifted out on the falling edge of CLK with most  
significant bit (MSB) first as shown in Figure 19. The Device ID values for the EN25D16 are listed in  
Table 5. If the 24-bit address is initially set to 000001h the Device ID will be read first  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
22  
Rev. B, Issue Date: 2008/06/23  
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