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EN25D16-100HI 参数 Datasheet PDF下载

EN25D16-100HI图片预览
型号: EN25D16-100HI
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存 [16 Megabit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 37 页 / 483 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25D16  
ABSOLUTE MAXIMUM RATINGS  
Stresses above the values so mentioned above may cause permanent damage to the device. These  
values are for a stress rating only and do not imply that the device should be operated at conditions  
up to or above these values. Exposure of the device to the maximum rating values for extended  
periods of time may adversely affect the device reliability.  
Parameter  
Value  
Unit  
Storage Temperature  
-65 to +125  
°C  
Plastic Packages  
-65 to +125  
200  
°C  
Output Short Circuit Current1  
mA  
Input and Output Voltage (with respect to  
ground) 2  
-0.5 to +4.0  
-0.5 to +4.0  
V
V
Vcc  
Notes:  
1.  
No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.  
2.  
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot Vss to –1.0V for  
periods of up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O  
pins is Vcc + 0.5 V. During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure  
below.  
RECOMMENDED OPERATING RANGES 1  
Parameter  
Value  
Unit  
Ambient Operating Temperature  
Industrial Devices  
-40 to 85  
°C  
Regulated: 3.0 to 3.6  
Full: 2.7 to 3.6  
Operating Supply Voltage  
Vcc  
V
Notes:  
1. Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.  
Vcc  
+1.5V  
Maximum Negative Overshoot Waveform  
Maximum Positive Overshoot Waveform  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
30  
Rev. B, Issue Date: 2008/06/23  
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