R
A3024
Absolute Maximum Ratings
Parameter
Maximum voltage at V
DD
Max. voltage at remaining pins
Min. voltage on all pins
Maximum storage temperature
Minimum storage temperature
Maximum electrostatic discharge
to MIL-STD-883C method 3015
Maximum soldering conditions
Symbol Conditions
V
DDmax
V
max
V
min
T
STOmax
T
STOmin
V
Smax
T
Smax
V
SS
+ 7.0V
V
DD
+ 0.3V
V
SS
- 0.3V
+125
O
C
-55
O
C
1000V
250 C x 10s
O
or electric fields; however, it is advised that normal precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when all
terminal voltages are kept within the supply voltage range.
Unused inputs must always be tied to a defined logic voltage
level.
Operating Conditions
Parameter
Operating temperature
Logic supply voltage
Supply voltage dv/dt
(power-up & down)
Decoupling capacitor
Crystal Characteristics
Frequency
Load Capacitance
Series resistance
Symbol Min. Typ. Max. Units
T
A
V
DD
dv/dt
100
f
C
L
R
S
32.768
8.2 12.5
35
50
-40
2.0
+85
5.0 5.5
6
O
C
V
Table 1
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond specified
operating conditions may affect device reliability or cause
malfunction.
V/
m
s
nF
kHz
pF
kW
Table 2
Handling Procedures
This device has built-in protection against high static voltages
7
Electrical Characteristics
V
DD
= 5.0V ± 10%, V
SS
= 0 V, T
A
= -40 to +85
O
C, unless otherwise specified
Parameter
Standby current
1)
Symbol Test Conditions
I
DD
I
DD
V
DD
= 3 V, PF = 0
V
DD
= 5 V, PF = 0
CS = 4 MHz, RD = V
SS
,
WR = V
DD
I
OL
= 8 mA
I
OH
= 1 mA, V
DD
= 2 V
T
A
= +25
0
C
T
A
= +25
0
C
I
OL
= 6 mA
I
OH
= 6 mA
T
A
= +25 C
V
ILS
= 0.8 V
V
SS
<V
IN
<V
DD
CS = 1
T
A
³
+25
O
C
0
Min.
Typ.
1.2
2
Max.
10
15
1.5
Units
mA
mA
mA
Dynamic current
2)
IRQ (open drain)
Output low voltage
Output low voltage
Inputs and Outputs
Input logic low
Input logic high
Output logic low
Output logic high
PF activation voltage
PF hysteresis
Pullup on SYNC
Input leakage
Output tri-state leakage
Oscillator Characteristics
Starting voltage
Start-up time
Frequency Characteristics
Frequency tolerance
Frequency stability
Temperature stability
1)
V
OL
V
OL
0.4
0.4
V
V
V
IL
V
IH
V
OL
V
OH
V
PFL
V
H
I
LS
I
IN
I
TS
V
STA
V
STA
T
STA
Df/f
f
sta
t
sta
0.8
×
V
DD
2.4
0.5
×
V
DD
100
20
10
10
2
2.5
1
0.2
×
V
DD
0.4
1000
1000
V
V
V
V
V
mV
mA
nA
nA
V
V
s
T
A
= +25 C addr. 10 hex = 00 hex
3)
2.0
£
V
DD
£
5.5 V
addr. 10 hex = 00 hex
O
210
1
see Fig. 5
4)
251
5
ppm
ppm/V
ppm
Table 3
2)
3)
4)
With PFO = 0 (V
SS
) all I/O pads can be tri-state, tested.
With PFO = 1 (V
DD
), CS = 1 (V
DD
) and all other I/O pads fixed to V
DD
or to V
SS
: same standby current, not tested.
All other inputs to V
DD
and all outputs open.
At a given temperature.
See Fig. 4
2
EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
