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EM25LV010-25KGBS 参数 Datasheet PDF下载

EM25LV010-25KGBS图片预览
型号: EM25LV010-25KGBS
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8 )串行闪存 [1 Megabit (128K x 8) Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 30 页 / 536 K
品牌: ELAN [ ELAN MICROELECTRONICS CORP ]
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EM25LV010  
1 Megabit (128K x 8) Serial Flash Memory  
SPECIFICATION  
Instructions  
All instructions, addresses, and data are shifted in and out of the device with the most  
significant bit shifted first.  
Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select  
(S#) is driven Low. Then, the one-byte instruction code must be shifted in to the device with  
the most significant bit entered first on Serial Data Input (D), and each bit being latched on the  
rising edges of Serial Clock (C). The instruction set is listed in Table 7 below.  
Depending on the instruction, the one-byte instruction code is followed by address bytes or  
data bytes, or both, or none at all. Chip Select (S#) must be driven High after the last bit of  
the instruction sequence has been shifted in.  
At the end of a Page Program (PP), Block Erase (BE), Chip Erase (CE), or Write Status  
Register (WRSR) instruction, Chip Select (S#) must be driven High exactly at a byte boundary.  
Otherwise the instruction will be rejected and not executed. That is, Chip Select (S#) must be  
driven High when the number of clock pulses after Chip Select (S#) being driven Low, is an  
exact multiple of eight. All attempts to access the memory array during a Write Status  
Register cycle, Program cycle, or Erase cycle are ignored, and the internal Write Status  
Register cycle, Program cycle, or Erase cycle will continue ineffectively.  
Address Dummy Data  
Instruction  
Description  
One-byte Instruction Code  
Bytes Bytes Bytes  
WREN  
WRDI  
RDSR  
WRSR  
READ  
FAST READ  
PP  
Write Enable  
0000 0110  
0000 0100  
0000 0101  
0000 0001  
0000 0011  
0000 1011  
0000 0010  
1101 1000  
1100 0111  
1011 1001  
0
0
0
0
3
3
3
3
0
0
0
0
0
0
0
1
0
0
0
0
0
Write Disable  
0
Read Status Register  
Write Status Register  
Read Data Bytes  
Read Data Bytes at Higher Speed  
Page Program  
1 to ∞  
1
1 to ∞  
1 to ∞  
1 to 256  
BE  
Block Erase  
0
0
0
CE  
Chip Erase  
DP  
Deep Power-down  
Release from Deep Power-down, and  
Read Device ID  
0
3
1 to ∞  
RES  
1010 1011  
1001 0000  
Release from Deep Power-down  
Read Manufacturer/Device ID  
0
0
0
3
0
RDID  
1 to ∞  
Table 7: Instruction Set  
This specification is subject to change without further notice. (11.08.2004 V1.0)  
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