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HM5225805BLTT-75 参数 Datasheet PDF下载

HM5225805BLTT-75图片预览
型号: HM5225805BLTT-75
PDF下载: 下载PDF文件 查看货源
内容描述: LVTTL 256M SDRAM接口的133 MHz / 100 MHz的4 Mword 】 16位】 4银行/ 8 - Mword 】 8位】 4银行/ 16 Mword 】 4位】 4银行PC / 133 , PC / 100 SDRAM [256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器PC时钟
文件页数/大小: 63 页 / 454 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5225165B/HM5225805B/HM5225405B-75/A6/B6  
Mode Register Configuration  
The mode register is set by the input to the address pins (A0 to A12, BA0 and BA1) during mode register set  
cycles. The mode register consists of five sections, each of which is assigned to address pins.  
BA1, BA0, A11, A10, A12, A9, A8: (OPCODE): The SDRAM has two types of write modes. One is the  
burst write mode, and the other is the single write mode. These bits specify write mode.  
Burst read and burst write: Burst write is performed for the specified burst length starting from the column  
address specified in the write cycle.  
Burst read and single write: Data is only written to the column address specified during the write cycle,  
regardless of the burst length.  
A7: Keep this bit Low at the mode register set cycle. If this pin is high, the vender test mode is set.  
A6, A5, A4: (LMODE): These pins specify the CAS latency.  
A3: (BT): A burst type is specified.  
A2, A1, A0: (BL): These pins specify the burst length.  
A12  
A11  
OPCODE  
BA1 BA0  
A10  
A9  
A8  
A7  
0
A6  
A5  
A4  
A3  
BT  
A2  
A1  
BL  
A0  
LMODE  
A6 A5 A4 CAS latency  
A3 Burst type  
Burst length  
BT=0 BT=1  
A2 A1 A0  
R
R
2
0
0
0
0
1
0
0
1
1
X
0
1
0
1
X
0
1
Sequential  
Interleave  
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
2
2
3
4
4
R
8
8
R
R
R
R
R
R
R
R
A9 A8  
Write mode  
A10  
BA1  
0
BA0 A12  
A11  
0
0
1
1
0
1
0
1
Burst read and burst write  
0
X
X
X
0
X
X
X
0
X
X
X
0
X
X
X
R
X
Burst read and single write  
R
R is Reserved (inhibit)  
X: 0 or 1  
X
X
Data Sheet E0082H10  
20  
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