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HM5225805BLTT-75 参数 Datasheet PDF下载

HM5225805BLTT-75图片预览
型号: HM5225805BLTT-75
PDF下载: 下载PDF文件 查看货源
内容描述: LVTTL 256M SDRAM接口的133 MHz / 100 MHz的4 Mword 】 16位】 4银行/ 8 - Mword 】 8位】 4银行/ 16 Mword 】 4位】 4银行PC / 133 , PC / 100 SDRAM [256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器PC时钟
文件页数/大小: 63 页 / 454 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5225165B/HM5225805B/HM5225405B-75/A6/B6  
To [DESL], [NOP]: These commands continue read operations until the burst operation is completed, and  
the SDRAM then enters precharge mode.  
To [ACTV]: This command makes other banks bank active. (However, an interval of tRRD is required.)  
Attempting to make the currently active bank active results in an illegal command.  
From WRITE state, command operation  
To [DESL], [NOP]: These commands continue write operations until the burst operation is completed.  
To [READ], [READ A]: These commands stop a burst and start a read cycle.  
To [WRIT], [WRIT A]: These commands stop a burst and start the next write cycle.  
To [ACTV]: This command makes the other bank active. (However, an interval of tRRD is required.)  
Attempting to make the currently active bank active results in an illegal command.  
To [PRE], [PALL]: These commands stop burst write and the SDRAM then enters precharge mode.  
From WRITE with AUTO-PRECHARGE state, command operation  
To [DESL], [NOP]: These commands continue write operations until the burst is completed, and the  
synchronous DRAM enters precharge mode.  
To [ACTV]: This command makes the other bank active. (However, an interval of tRRD is required.)  
Attempting to make the currently active bank active results in an illegal command.  
From REFRESH state, command operation  
To [DESL], [NOP]: After an auto-refresh cycle (after tRC), the SDRAM automatically enters the IDLE state.  
Data Sheet E0082H10  
18  
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