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HM51W16165LTT-5 参数 Datasheet PDF下载

HM51W16165LTT-5图片预览
型号: HM51W16165LTT-5
PDF下载: 下载PDF文件 查看货源
内容描述: 16M的EDO DRAM ( 1 - Mword ×16位), 4K的刷新/ 1千刷新 [16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 35 页 / 598 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM51W16165 Series  
HM51W18165 Series  
16 M EDO DRAM (1-Mword × 16-bit)  
4 k Refresh/1 k Refresh  
E0153H10 (Ver. 1.0)  
(Previous ADE-203-650D (Z))  
Jul. 6, 2001 (K)  
Description  
The HM51W16165 Series, HM51W18165 Series are CMOS dynamic RAMs organized as 1,048,576-word  
× 16-bit. They employ the most advanced CMOS technology for high performance and low power.  
HM51W16165 Series, HM51W18165 Series offer Extended Data Out (EDO) Page Mode as a high speed  
access mode. They have package variations of standard 400-mil 42-pin plastic SOJ and 400-mil 50-pin  
plastic TSOP.  
Features  
Single 3.3 V (±0.3 V)  
Access time: 50 ns/60 ns/70 ns (max)  
Power dissipation  
Active mode : 396 mW/360mW/324 mW (max) (HM51W16165 Series)  
: 684 mW /612 mW /540 mW (max) (HM51W18165 Series)  
Standby mode : 7.2 mW (max)  
: 0.54 mW (max) (L-version)  
EDO page mode capability  
Refresh cycles  
4096 refresh cycles : 64 ms (HM51W16165 Series)  
: 128 ms (L-version)  
1024 refresh cycles : 16 ms (HM51W18165 Series)  
: 128 ms (L-version)  
4 variations of refresh  
RAS-only refresh  
CAS-before-RAS refresh  
Hidden refresh  
Self refresh (L-version)  
2CAS-byte control  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.