EDS6432AFTA, EDS6432CFTA
DC Characteristics 2 (TA = 0°C to +70°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V) [EDS6432AF]
(TA = 0°C to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) [EDS6432CF]
[EDS6432AF]
Parameter
Symbol
ILI
min.
–1
max.
1
Unit
µA
µA
V
Test condition
Note
Input leakage current
Output leakage current
Output high voltage
Output low voltage
0 ≤ VIN ≤ VDD
ILO
–1.5
2.4
—
1.5
—
0 ≤ VOUT ≤ VDD, DQ = disable
IOH = –2 mA
VOH
VOL
0.4
V
IOL = 2 mA
[EDS6432CF]
Parameter
Symbol
ILI
min.
–1
max.
1
Unit
µA
µA
V
Test condition
Note
Input leakage current
Output leakage current
Output high voltage
Output low voltage
0 ≤ VIN ≤ VDD
ILO
–1.5
2.0
—
1.5
—
0 ≤ VOUT ≤ VDD, DQ = disable
IOH = –1 mA
VOH
VOL
0.4
V
IOL = 1 mA
Pin Capacitance (TA = 25°C, VDD, VDDQ = 3.3V ± 0.3V) [EDS6432AF]
(TA = 25°C, VDD, VDDQ = 2.5V ± 0.2V) [EDS6432CF]
Parameter
Symbol
CI1
Pins
CLK
min.
2.5
typ.
—
max.
3.5
Unit
pF
Notes
Input capacitance
1, 2, 4
Address, CKE, /CS,
/RAS, /CAS, /WE,
DQM
CI2
2.5
—
3.8
pF
1, 2, 4
Data input/output
capacitance
CI/O
DQ
4
—
6.5
pF
1, 2, 3, 4
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1MHz, 1.4V(EDS6432AFTA) and 1.2V (EDS6432CFTA) bias, 200mV swing.
3. DQM = VIH to disable DOUT.
4. This parameter is sampled and not 100% tested.
Data Sheet E0487E50 (Ver. 5.0)
6
ELPIDA [ ELPIDA MEMORY ]
