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EDS6416AHTA-75TI-E 参数 Datasheet PDF下载

EDS6416AHTA-75TI-E图片预览
型号: EDS6416AHTA-75TI-E
PDF下载: 下载PDF文件 查看货源
内容描述: 64M位SDRAM WTR (宽温度范围) [64M bits SDRAM WTR (Wide Temperature Range)]
分类和应用: 动态存储器
文件页数/大小: 49 页 / 676 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS6416AHTA-TI  
DC Characteristics 1 (TA = –40 to +85°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)  
Parameter  
Symbol  
IDD1  
Grade  
max.  
100  
Unit  
mA  
Test condition  
Burst length = 1  
tRC = tRC (min.)  
Notes  
1, 2, 3  
Operating current  
CKE = VIL,  
Standby current in power down  
IDD2P  
IDD2PS  
IDD2N  
IDD2NS  
IDD3P  
IDD3PS  
IDD3N  
IDD3NS  
IDD4  
3
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
6
tCK = tCK (min.)  
Standby current in power down  
(input signal stable)  
2
CKE = VIL, tCK = ∞  
7
CKE, /CS = VIH,  
tCK = tCK (min.)  
CKE = VIH, tCK = ,  
/CS = VIH  
CKE = VIL,  
tCK = tCK (min.)  
Standby current in non power down  
20  
9
4
Standby current in non power down  
(input signal stable)  
8
Active standby current in power down  
4
1, 2, 6  
2, 7  
1, 2, 4  
2, 8  
1, 2, 5  
3
Active standby current in power down  
(input signal stable)  
3
CKE = VIL, tCK = ∞  
CKE, /CS = VIH,  
tCK = tCK (min.)  
CKE = VIH, tCK = ,  
/CS = VIH  
tCK = tCK (min.),  
BL = 4  
Active standby current in non power down  
35  
20  
120  
220  
1.5  
Active standby current in non power down  
(input signal stable)  
Burst operating current  
Refresh current  
IDD5  
tRC = tRC (min.)  
VIH VDD – 0.2V  
VIL 0.2V  
Self refresh current  
IDD6  
Notes: 1. IDD depends on output load condition when the device is selected. IDD (max.) is specified at the output  
open condition.  
2. One bank operation.  
3. Input signals are changed once per one clock.  
4. Input signals are changed once per two clocks.  
5. Input signals are changed once per four clocks.  
6. After power down mode, CLK operating current.  
7. After power down mode, no CLK operating current.  
8. Input signals are VIH or VIL fixed.  
Preliminary Data Sheet E0636E10 (Ver.1.0)  
5