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EDS5104ABTA-7A 参数 Datasheet PDF下载

EDS5104ABTA-7A图片预览
型号: EDS5104ABTA-7A
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位的SDRAM [512M bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 52 页 / 558 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS5104ABTA, EDS5108ABTA, EDS5116ABTA  
Read command to Precharge command interval (same bank)  
When the precharge command is executed for the same bank as the read command that preceded it, the minimum  
interval between the two commands is one clock. However, since the output buffer then becomes High-Z after the  
clocks defined by lHZP, there is a case of interruption to burst read data output will be interrupted, if the precharge  
command is input during burst read. To read all data by burst read, the clocks defined by lEP must be assured as  
an interval from the final data output to precharge command execution.  
CLK  
PRE/PALL  
out A2  
READ  
Command  
DQ  
out A0  
out A1  
out A3  
CL=2  
lEP = -1 cycle  
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 2, BL = 4)  
CLK  
PRE/PALL  
out A1  
READ  
Command  
DQ  
out A0  
out A2  
out A3  
CL=3  
lEP = -2 cycle  
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4)  
CLK  
PRE/PALL  
READ  
Command  
High-Z  
DQ  
out A0  
lHZP = 2  
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2, BL = 1, 2, 4, 8)  
CLK  
PRE/PALL  
READ  
Command  
DQ  
High-Z  
out A0  
lHZP =3  
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 1, 2, 4, 8)  
Preliminary Data Sheet E0250E10 (Ver. 1.0)  
38  
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