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EDS5104ABTA-7A 参数 Datasheet PDF下载

EDS5104ABTA-7A图片预览
型号: EDS5104ABTA-7A
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位的SDRAM [512M bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 52 页 / 558 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS5104ABTA, EDS5108ABTA, EDS5116ABTA  
Command Intervals  
Read command to Read command interval  
1. Same bank, same ROW address: When another read command is executed at the same ROW address of the  
same bank as the preceding read command execution, the second read can be performed after an interval of no  
less than 1 clock. Even when the first command is a burst read that is not yet finished, the data read by the  
second command will be valid.  
CLK  
Command  
ACT  
Row  
READ  
READ  
Column A Column B  
Address  
BS  
DQ  
out A0  
out B2 out B3  
out B0 out B1  
CL = 3  
BL = 4  
Bank 0  
Column =B  
Dout  
Bank0  
Active  
Column =A Column =B Column =A  
Read Read Dout  
READ to READ Command Interval (same ROW address in same bank)  
2. Same bank, different ROW address: When the ROW address changes on same bank, consecutive read  
commands cannot be executed; it is necessary to separate the two read commands with a precharge command  
and a bank active command.  
3. Different bank: When the bank changes, the second read can be performed after an interval of no less than 1  
clock, provided that the other bank is in the bank active state. Even when the first command is a burst read that  
is not yet finished, the data read by the second command will be valid.  
CLK  
Command  
READ READ  
ACT  
ACT  
Column A  
Row 1  
Column B  
Address  
BS  
Row 0  
DQ  
out A0  
out B2 out B3  
out B0 out B1  
Bank3  
Dout  
Bank0  
Dout  
CL = 3  
BL = 4  
Bank0  
Active  
Bank3 Bank0 Bank3  
Active Read Read  
READ to READ Command Interval (different bank)  
Preliminary Data Sheet E0250E10 (Ver. 1.0)  
32  
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