EDJ1108BABG, EDJ1116BABG
ODT AC Electrical Characteristics [DDR3-1066, 800]
-AC, -AE, -AG
-8A, -8C
800
Data rate (Mbps)
Parameter
1066
min.
Symbol
tAON
max.
300
min.
max.
400
Unit
ps
Notes
RTT turn-on
–300
–400
7, 12, 37
Asynchronous RTT turn-on delay
tAONPD
tAOF
2
8.5
2
8.5
ns
(power-down with DLL frozen)
RTT_Nom and RTT_WR turn-off
time from ODTLoff reference
ODT turn-off (power-down mode) tAOFPD
0.3
0.7
8.5
0.3
0.7
8.5
tCK (avg) 8, 12, 37
2
2
ns
ODT to power-down entry/exit
latency
tANPD
WL – 1.0
WL – 1.0
nCK
ODT turn-on Latency
ODT turn-off Latency
ODTLon
ODTLoff
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
nCK
ODT Latency for changing from
RTT_Nom to RTT_WR
ODTLcnw
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
ODT Latency for change from
RTT_WR to RTT_Nom
(BC4)
ODTLcwn4
4 + ODTLoff
4 + ODTLoff
nCK
ODT Latency for change from
RTT_WR to RTT_Nom
(BL8)
ODTLcwn8
6 + ODTLoff
6 + ODTLoff
nCK
ODT high time without WRIT
command or with WRIT command ODTH4
4
6
4
6
nCK
nCK
and BC4
ODT high time with WRIT
ODTH8
command and BL8
RTT dynamic change skew
tADC
0.3
0.7
0.3
0.7
tCK (avg) 12, 37
nCK
Power-up and reset calibration time tZQinit
512
512
Normal operation full calibration
tZQoper
tZQCS
256
64
256
64
nCK
time
Normal operation short calibration
time
nCK
30
Write Leveling Characteristics [DDR3-1066, 800]
-AC, -AE, -AG
-8A, -8C
800
1066
min.
Parameter
Symbol
max.
min.
max.
Unit
Notes
3
First DQS pulse rising edge after
write leveling mode is
programmed
DQS, /DQS delay after write
leveling mode is programmed
Write leveling setup time from
rising CK, /CK crossing to rising tWLS
DQS, /DQS crossing
tWLMRD
40
40
nCK
nCK
ps
tWLDQSEN
25
25
3
245
325
Write leveling hold time from
rising DQS, /DQS crossing to
rising CK, /CK crossing
tWLH
245
325
ps
Write leveling output delay
tWLO
0
0
9
2
0
0
9
2
ns
ns
Write leveling output error
tWLOE
Data Sheet E1248E40 (Ver. 4.0)
57
ELPIDA [ ELPIDA MEMORY ]
