EDJ1108BABG, EDJ1116BABG
ODT AC Electrical Characteristics [DDR3-1600, 1333]
-GL, -GN
-DG, -DJ
1333
Data rate (Mbps)
Parameter
1600
min.
Symbol
tAON
max.
225
min.
max.
250
Unit
ps
Notes
7, 12,
37
RTT turn-on
−225
−250
Asynchronous RTT turn-on delay
(power-down with DLL frozen)
RTT_Nom and RTT_WR turn-off
time from ODTLoff reference
Asynchronous RTT turn-off delay
(power-down with DLL frozen)
ODT to power-down entry/exit
latency
tAONPD
tAOF
2
8.5
0.7
8.5
2
8.5
0.7
8.5
ns
tCK
(avg)
8, 12,
37
0.3
0.3
tAOFPD
tANPD
2
2
ns
WL – 1.0
WL – 1.0
nCK
ODT turn-on Latency
ODT turn-off Latency
ODTLon
ODTLoff
WL – 2
WL – 2
WL – 2
WL – 2
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
nCK
ODT Latency for changing from
RTT_Nom to RTT_WR
ODT Latency for change from
RTT_WR to RTT_Nom
(BC4)
ODTLcnw WL – 2
ODTLcwn4
WL – 2
WL – 2.0
WL – 2.0
nCK
nCK
4 + ODTLoff
4 + ODTLoff
ODT Latency for change from
RTT_WR to RTT_Nom
(BL8)
ODTLcwn8
6 + ODTLoff
6 + ODTLoff
nCK
ODT high time without WRIT
command or with WRIT command ODTH4
and BC4
4
6
4
6
nCK
nCK
ODT high time with WRIT command
ODTH8
and BL8
tCK
RTT dynamic change skew
tADC
0.3
0.7
0.3
0.7
12, 37
30
(avg)
Power-up and reset calibration time tZQinit
Normal operation full calibration
time
Normal operation short calibration
time
512
256
512
256
nCK
tZQoper
tZQCS
nCK
64
64
nCK
Write Leveling Characteristics [DDR3-1600, 1333]
-GL, -GN
-DG, -DJ
1333
1600
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
First DQS pulse rising edge after
write leveling mode is
programmed
DQS, /DQS delay after write
leveling mode is programmed
Write leveling setup time from
rising CK, /CK crossing to rising tWLS
DQS, /DQS crossing
tWLMRD
40
40
nCK
nCK
ps
3
3
tWLDQSEN
25
25
165
195
Write leveling hold time from
rising DQS, /DQS crossing to
rising CK, /CK crossing
tWLH
165
195
ps
Write leveling output delay
tWLO
0
0
7.5
2
0
0
9
2
ns
ns
Write leveling output error
tWLOE
Data Sheet E1248E40 (Ver. 4.0)
53
ELPIDA [ ELPIDA MEMORY ]
