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EDJ1108BABG-AC-E 参数 Datasheet PDF下载

EDJ1108BABG-AC-E图片预览
型号: EDJ1108BABG-AC-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
DDR3 SDRAM Mode Register 3 [MR3]  
The Mode Register MR3 controls Multi Purpose Registers (MPR). The Mode Register 3 is written by asserting low  
on /CS, /RAS, /CAS, /WE, high on BA1 and BA0, while controlling the states of address pins according to the table  
below.  
Address field  
BA2 BA1 BA0 A13 A12 A11 A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
Mode register 3  
0*1  
0*1  
1
1
MPR MPR Loc  
MPR Address  
A1 A0  
MPR location  
2
MPR Operation  
A2  
0
0
1
1
0
1
0
1
Predefined pattern*  
MPR  
RFU  
RFU  
RFU  
3
Normal operation  
*
0
1
Data flow from MPR  
N
otes : 1. BA2,A3 toA13 are reserved for future use (RFU) and must be programmed to 0 during MRS.  
2. The predefined pattern will be used for read synchronization.  
3 . When MPR control is set for normal operation, MR3 A[2]=0, MR3 A[1:0] will be ignored.  
MR3 Programming  
Data Sheet E1248E40 (Ver. 4.0)  
78  
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