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EDJ1108BABG-AC-E 参数 Datasheet PDF下载

EDJ1108BABG-AC-E图片预览
型号: EDJ1108BABG-AC-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
6. Measurement Definition for VM and VM:  
Measure voltage (VM) at test pin (midpoint) with no load:  
2× VM  
VM =   
-1×100  
VDDQ  
ODT Temperature and Voltage Sensitivity  
If temperature and/or voltage change after calibration, the tolerance limits widen according to the table ODT  
Sensitivity Definition and ODT Voltage and Temperature Sensitivity.  
T = T T (@calibration); V= VDDQ VDDQ (@calibration); VDD = VDDQ  
Note: dRTTdT and dRTTdV are not subject to production test but are verified by design and characterization.  
[ODT Sensitivity Definition]  
min.  
max.  
Unit  
RTT  
0.9 dRTTdT × |T| - dRTTdV × |V|  
1.6 + dRTTdT×|T| + dRTTdV × |V|  
RZQ/2, 4, 6, 8, 12  
[ODT Voltage and Temperature Sensitivity]  
min.  
max.  
1.5  
Unit  
dRTTdT  
dRTTdV  
0
0
%/°C  
%/mV  
0.15  
ODT Timing Definitions  
Test Load for ODT Timings  
Different than for timing measurements, the reference load for ODT timings are defined in ODT Timing Reference  
Load.  
VDDQ  
DUT  
DQ  
DQS,  
/DQS  
CK, /CK  
VTT = VSSQ/2  
RT =25Ω  
ODT Timing Reference Load  
Data Sheet E1248E40 (Ver. 4.0)  
28  
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