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EDJ1108BABG-AC-E 参数 Datasheet PDF下载

EDJ1108BABG-AC-E图片预览
型号: EDJ1108BABG-AC-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
IDD Measurement Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)  
Within the tables about IDD measurement conditions, the following definitions are used:  
L: VIN VIL (AC)(max.)  
H: VIN VIH (AC)(min.);  
STABLE: inputs are stable at H or L level  
FLOATING: inputs are VREF = VDDQ / 2  
SWITCHING: Described in the following Definition of SWITCHING table.  
N/A: not available  
[Definition of SWITCHING]  
Signals  
Definitions  
If not otherwise mentioned the inputs are stable at H or L during 4 clocks and change then to the  
opposite value  
Address (row, column)  
(e.g. Ax Ax Ax Ax /Ax /Ax /Ax /Ax Ax Ax Ax Ax .....  
Please see each IDDx definition for details  
If not otherwise mentioned the bank addresses should be switched like the row/column  
addresses - please see each IDDx definition for details  
Bank address  
Define D = {/CS, /RAS, /CAS, /WE } := {H, L, L, L}  
Define /D = {/CS, /RAS, /CAS, /WE } := {H, H, H, H}  
Command  
(/CS, /RAS, /CAS, /WE)  
Define Command Background Pattern = D D /D /D D D /D /D D D /D /D ...  
If other commands are necessary (e.g. ACT for IDD0 or Read for IDD4R) the Background Pattern  
Command is substituted by the respective /CS, /RAS, /CAS, /WE levels of the necessary command.  
See each IDDx definition for details and figures of Example of IDD1, IDD2N/IDD3N, IDD4R.  
Data DQ is changing between H and L every other data transfer (once per clock) for DQ signals,  
which means that data DQ is stable during one clock;  
see each IDDx definition for exceptions from this rule and for further details.  
See figures of Example of IDD1, IDD2N/IDD3N, IDD4R.  
Data (DQ)  
Data Masking (DM)  
NO Switching; DM must be driven L all the time  
AC Timing for IDD Test Conditions  
For purposes of IDD testing, the following parameters are to be utilized.  
DDR3-1600  
DDR3-1333  
DDR3-1066  
DDR3-800  
5-5-5  
5
Parameter  
10-10-10 11-11-11 8-8-8  
9-9-9  
9
6-6-6  
6
7-7-7  
8-8-8  
8
6-6-6  
6
Unit  
tCK  
ns  
CL (IDD)  
10  
11  
8
7
tCK min.(IDD)  
tRCD min. (IDD)  
tRC min. (IDD)  
tRAS min.(IDD)  
tRP min. (IDD)  
tFAW (IDD)-×8  
tFAW (IDD)-×16  
tRRD (IDD)-×8  
tRRD (IDD)-×16  
tRFC (IDD)  
1.25  
12.5  
47.5  
35  
1.25  
13.75  
48.75  
35  
1.5  
12  
48  
36  
12  
30  
45  
6.0  
7.5  
110  
1.5  
13.5  
49.5  
36  
1.875  
11.25  
48.75  
37.5  
11.25  
37.5  
50  
1.875  
13.13  
50.63  
37.5  
13.13  
37.5  
50  
1.875  
15  
2.5  
2.5  
15  
12.5  
50  
ns  
52.50  
37.5  
15  
52.5  
37.5  
15  
ns  
37.5  
12.5  
40  
ns  
12.5  
30  
13.75  
30  
13.5  
30  
ns  
37.5  
50  
40  
ns  
45  
50  
50  
ns  
6.0  
6.0  
6.0  
7.5  
110  
7.5  
7.5  
7.5  
10  
10  
ns  
10  
10  
10  
10  
10  
ns  
110  
110  
110  
110  
110  
110  
110  
ns  
Data Sheet E1248E40 (Ver. 4.0)  
32  
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