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EDJ1116BBSE-8A-F 参数 Datasheet PDF下载

EDJ1116BBSE-8A-F图片预览
型号: EDJ1116BBSE-8A-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 151 页 / 1895 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第102页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第103页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第104页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第105页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第107页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第108页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第109页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第110页  
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11 T12  
T13  
CK  
/CK  
Command*3  
Address*4  
READ  
NOP  
Bank  
Col n  
tRPST  
tRPRE  
DQS, /DQS*2  
DQ  
Dout Dout Dout Dout Dout Dout Dout Dout  
n+1 n+2 n+3 n+4 n+5 n+6 n+7  
n
AL = 4  
CL = 5  
RL = AL + CL  
VIH or VIL  
Notes: 1. BL8, RL = 9, AL = (CL 1), CL = 5  
2. Dout n = data-out from column n.  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.  
Burst Read Operation, RL = 9  
T0  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13 T14  
CK  
/CK  
Command*3  
READ  
READ  
NOP  
NOP  
tCCD  
Address*4  
Bank  
Col n  
Bank  
Col b  
tRPST  
tRPRE  
DQS, /DQS  
DQ*2  
Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout  
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7  
b
b+1 b+2 b+3 b+4 b+5 b+6 b+7  
RL = 5  
RL = 5  
VIH or VIL  
Notes: 1. BL8, RL = 5 (CL = 5, AL = 0).  
2. Dout n (or b) = data-out from column n (or column b).  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0 and T4.  
READ (BL8) to READ (BL8)  
Data Sheet E1375E50 (Ver. 5.0)  
106  
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