EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Operation of the DDR3 SDRAM
Read Timing Definition
Read timing is shown in the following Figure and is applied when the DLL is enabled and locked.
Rising data strobe edge parameters:
• tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, /CK.
• tDQSCK is the actual position of a rising strobe edge relative to CK, /CK.
• tQSH describes the DQS, /DQS differential output high time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
Falling data strobe edge parameters:
• tQSL describes the DQS, /DQS differential output low time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
tDQSQ; both rising/falling edges of DQS, no tAC defined.
/CK
CK
tDQSCK(min.)
tDQSCK(max.)
tDQSCK(min.)
tDQSCK(max.)
Rising Strobe
Region
Rising Strobe
Region
tDQSCK
tDQSCK
tQSL
tQSH
/DQS
DQS
tQH
tQH
tDQSQ
tDQSQ
Associated
DQ Pins
READ Timing Definition
Data Sheet E1375E50 (Ver. 5.0)
101
ELPIDA [ ELPIDA MEMORY ]
