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EDE5104AGSE-5C-E 参数 Datasheet PDF下载

EDE5104AGSE-5C-E图片预览
型号: EDE5104AGSE-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位DDR2 SDRAM [512M bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 65 页 / 657 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE5104AGSE, EDE5108AGSE  
max.  
× 8  
× 4  
Parameter  
Symbol Grade  
Unit  
mA  
Test condition  
tCK = tCK (IDD);  
-6C  
-6E  
-5C  
-4A  
TBD  
270  
250  
230  
TBD  
270  
250  
230  
Refresh command at every tRFC (IDD) interval;  
CKE is H, /CS is H between valid commands;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Auto-refresh current IDD5  
Self Refresh Mode;  
CK and /CK at 0V;  
Self-refresh current  
IDD6  
IDD7  
6
6
mA  
mA  
CKE 0.2V;  
Other control and address bus inputs are FLOATING;  
Data bus inputs are FLOATING  
all bank interleaving reads, IOUT = 0mA;  
BL = 4, CL = CL(IDD),  
AL = tRCD (IDD) 1 × tCK (IDD);  
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD),  
tRCD = 1 × tCK (IDD);  
CKE is H, CS is H between valid commands;  
Address bus inputs are STABLE during DESELECTs;  
Data pattern is same as IDD4W;  
-6C  
-6E  
-5C  
-4A  
TBD  
300  
300  
280  
TBD  
320  
320  
300  
Operating current  
(Bank interleaving)  
Notes: 1. IDD specifications are tested after the device is properly initialized.  
2. Input slew rate is specified by AC Input Test Condition.  
3. IDD parameters are specified with ODT disabled.  
4. Data bus consists of DQ, DM, DQS, /DQS, RDQS, /RDQS. IDD values must be met with all combinations  
of EMRS bits 10 and 11.  
5. Definitions for IDD  
L is defined as VIN VIL (AC) (max.)  
H is defined as VIN VIH (AC) (min.)  
STABLE is defined as inputs stable at an H or L level  
FLOATING is defined as inputs at VREF = VDDQ/2  
SWITCHING is defined as:  
inputs changing between H and L every other clock cycle (once per two clocks) for address and control  
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals  
not including masks or strobes.  
6. Refer to AC Timing for IDD Test Conditions.  
AC Timing for IDD Test Conditions  
For purposes of IDD testing, the following parameters are to be utilized.  
DDR2-667  
DDR2-667  
DDR2-533  
4-4-4  
4
DDR2-400  
4-4-4  
4
5-5-5  
5
3-3-3  
3
Parameter  
CL(IDD)  
Unit  
tCK  
ns  
tRCD(IDD)  
tRC(IDD)  
12  
15  
15  
15  
57  
60  
60  
55  
ns  
tRRD(IDD)  
tCK(IDD)  
7.5  
3
7.5  
3
7.5  
7.5  
5
ns  
3.75  
45  
ns  
tRAS(min.)(IDD)  
tRAS(max.)(IDD)  
tRP(IDD)  
45  
45  
40  
ns  
70000  
12  
70000  
15  
70000  
15  
70000  
15  
ns  
ns  
tRFC(IDD)  
105  
105  
105  
105  
ns  
Preliminary Data Sheet E0715E20 (Ver. 2.0)  
8
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