欢迎访问ic37.com |
会员登录 免费注册
发布采购

EDE5104AGSE-5C-E 参数 Datasheet PDF下载

EDE5104AGSE-5C-E图片预览
型号: EDE5104AGSE-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位DDR2 SDRAM [512M bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 65 页 / 657 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第14页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第15页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第16页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第17页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第19页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第20页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第21页浏览型号EDE5104AGSE-5C-E的Datasheet PDF文件第22页  
EDE5104AGSE, EDE5108AGSE  
Command Operation  
Command Truth Table  
The DDR2 SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.  
CKE  
Previous Current  
BA1,  
A13 to  
A11  
A0 to  
A10 A9  
Function  
Symbol cycle  
cycle  
H
H
H
L
/CS /RAS /CAS /WE BA0  
Notes  
Mode register set  
Extended mode register set  
Auto refresh  
MRS  
H
H
H
H
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
H
H
L
H
L
L
L
L
BA0 = 0 and MRS OP Code  
BA0 = 1 and EMRS OP Code  
1
EMRS  
REF  
L
L
L
1
L
L
H
H
×
×
×
×
×
×
×
×
×
×
×
×
L
H
×
×
×
×
×
×
1
Self refresh entry  
Self refresh exit  
SELF  
SELFX  
L
L
×
1
H
H
H
H
H
H
H
H
H
×
×
×
H
H
H
H
L
×
1, 6  
L
H
L
H
L
×
Single bank precharge  
Precharge all banks  
Bank activate  
PRE  
H
H
H
H
H
H
H
H
H
H
H
L
BA  
×
1, 2  
1
PALL  
ACT  
L
L
L
H
L
BA  
BA  
BA  
BA  
BA  
×
Row Address  
Column L  
Column H  
Column L  
Column H  
1, 2  
Write  
WRIT  
WRITA  
READ  
READA  
NOP  
H
H
H
H
H
×
Column 1, 2, 3  
Column 1, 2, 3  
Column 1, 2, 3  
Column 1, 2, 3  
Write with auto precharge  
Read  
L
L
L
H
H
H
×
Read with auto precharge  
No operation  
L
H
×
×
H
×
H
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
1
Device deselect  
Power down mode entry  
DESL  
PDEN  
×
×
1
L
×
×
×
1, 4  
L
H
×
H
×
×
Power down mode exit  
PDEX  
H
H
×
1, 4  
L
H
H
×
Remark: H = VIH. L = VIL. × = VIH or VIL  
Notes: 1. All DDR2 commands are defined by states of /CS, /RAS, /CAS, /WE and CKE at the rising edge of the  
clock.  
2. Bank select (BA0, BA1), determine which bank is to be operated upon.  
3. Burst reads or writes should not be terminated other than specified as Reads interrupted by a Readin  
burst read command [READ] or Writes interrupted by a Writein burst write command [WRIT].  
4. The power down mode does not perform any refresh operations. The duration of power down is therefore  
limited by the refresh requirements of the device. One clock delay is required for mode entry and exit.  
5. The state of ODT does not affect the states described in this table. The ODT function is not available  
during self-refresh.  
6. Self refresh exit is asynchronous.  
Preliminary Data Sheet E0715E20 (Ver. 2.0)  
18  
 复制成功!