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EDE1108AFBG-8G-F 参数 Datasheet PDF下载

EDE1108AFBG-8G-F图片预览
型号: EDE1108AFBG-8G-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 78 页 / 734 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1108AFBG  
Burst Write followed by Precharge  
Minimum Write to Precharge Command spacing to the same bank = WL + BL/2 clocks + tWR  
For write cycles, a delay must be satisfied from the completion of the last burst write cycle until the precharge  
command can be issued. This delay is known as a write recovery time (tWR) referenced from the completion of the  
burst write to the precharge command. No precharge command should be issued prior to the tWR delay, as DDR2  
SDRAM allows the burst interrupt operation only Read by Read or Write by Write at the boundary of burst 4.  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
/CK  
CK  
Posted  
WRIT  
NOP  
PRE  
Command  
tWR  
DQS, /DQS  
WL = 3  
in0  
in1  
in2  
in3  
DQ  
Completion of  
the burst write  
Burst Write Followed by Precharge (WL = (RL-1) =3)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T9  
/CK  
CK  
Posted  
WRIT  
NOP  
PRE  
Command  
tWR  
DQS, /DQS  
DQ  
WL = 4  
in0  
in1  
in2  
in3  
Completion of  
the burst write  
Burst Write Followed by Precharge (WL = (RL-1) = 4)  
Preliminary Data Sheet E1430E20 (Ver. 2.0)  
61  
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