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EDE1108AFBG-8G-F 参数 Datasheet PDF下载

EDE1108AFBG-8G-F图片预览
型号: EDE1108AFBG-8G-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 78 页 / 734 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第60页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第61页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第62页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第63页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第65页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第66页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第67页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第68页  
EDE1108AFBG  
T-1  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
Tn  
/CK  
CK  
A10 = 1  
Posted  
READ  
NOP  
Command  
ACT  
tRAS(min.)  
DQS, /DQS  
tRP  
AL = 2  
CL = 3  
RL = 5  
out0 out1 out2 out3  
DQ  
tRC (min.)  
Auto precharge begins  
Burst Read with Auto Precharge Followed by an Activation to the Same Bank (tRAS lockout case)  
(RL = 5, BL = 4 (AL = 2, CL = 3))  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
/CK  
CK  
A10 = 1  
Posted  
READ  
NOP  
ACT  
NOP  
Command  
tRAS(min.)  
DQS, /DQS  
tRP (min.)  
AL = 2  
CL = 3  
RL = 5  
out0 out1 out2 out3  
DQ  
tRC  
Auto precharge begins  
Burst Read with Auto Precharge Followed by an Activation to the Same Bank (tRP limit)  
(RL = 5, BL = 4 (AL = 2, CL = 3, tRTP 2tCK))  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
CK  
/CK  
A10 = 1  
READ  
NOP  
Command  
ACT  
tRAS (min.)  
DQS, /DQS  
AL = 2  
CL = 3  
tRP  
RL = 5  
out0 out1 out2 out3 out4 out5 out6 out7  
DQ  
tRC  
Auto precharge begins  
Burst Read with Auto Precharge Followed by an Activation to the Same Bank  
(RL = 5, BL = 8 (AL = 2, CL = 3, tRTP 2tCK))  
Preliminary Data Sheet E1430E20 (Ver. 2.0)  
64  
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