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EDE1108AFBG-8G-F 参数 Datasheet PDF下载

EDE1108AFBG-8G-F图片预览
型号: EDE1108AFBG-8G-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 78 页 / 734 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1108AFBG  
Pin Function  
CK, /CK (input pins)  
CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the  
positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK  
(both directions of crossing).  
/CS (input pin)  
All commands are masked when /CS is registered high. /CS provides for external rank selection on systems with  
multiple ranks. /CS is considered part of the command code.  
/RAS, /CAS, /WE (input pins)  
/RAS, /CAS and /WE (along with /CS) define the command being entered.  
A0 to A13 (input pins)  
Provided the row address for Active commands and the column address and Auto Precharge bit for Read/Write  
commands to select one location out of the memory array in the respective bank. The address inputs also provide  
the op-code during mode register set commands.  
[Address Pins Table]  
Address (A0 to A13)  
Note  
Part number  
Row address  
AX0 to AX13  
Column address  
AY0 to AY9  
EDE1108AFBG  
A10 (AP) (input pin)  
A10 is sampled during a precharge command to determine whether the precharge applies to one bank (A10 = low)  
or all banks (A10 = high). If only one bank is to be precharged, the bank is selected by BA0, BA1 and BA2.  
BA0, BA1, BA2 (input pins)  
BA0, BA1 and BA2 define to which bank an active, read, write or precharge command is being applied. BA0 and  
BA1 also determine if the mode register or extended mode register is to be accessed during a MRS or EMRS (1),  
EMRS (2) cycle.  
[Bank Select Signal Table]  
BA0  
L
BA1  
L
BA2  
L
Bank 0  
Bank 1  
H
L
L
L
Bank 2  
H
H
L
L
Bank 3  
H
L
L
Bank 4  
H
H
H
H
Bank 5  
H
L
L
Bank 6  
H
H
Bank 7  
H
Remark: H: VIH. L: VIL.  
Preliminary Data Sheet E1430E20 (Ver. 2.0)  
27  
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