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EDE1108ABSE-4A-E 参数 Datasheet PDF下载

EDE1108ABSE-4A-E图片预览
型号: EDE1108ABSE-4A-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 82 页 / 645 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1104ABSE, EDE1108ABSE, EDE1116ABSE  
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V 0.1V)  
max.  
× 4  
× 8  
× 16  
Parameter  
Symbol Grade  
Unit  
mA  
Test condition  
-8E  
-6C  
110  
100  
100  
95  
110  
100  
100  
95  
120  
110  
110  
one bank; tCK = tCK (IDD), tRC = tRC (IDD),  
tRAS = tRAS min.(IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Operating current  
(ACT-PRE)  
IDD0  
IDD1  
-6E  
-5C  
-4A  
90  
90  
one bank; IOUT = 0mA;  
BL = 4, CL = CL(IDD), AL = 0;  
-8E  
-6C  
-6E  
-5C  
-4A  
120  
110  
110  
105  
100  
125  
115  
115  
110  
105  
140  
130  
130  
tCK = tCK (IDD), tRC = tRC (IDD),  
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data pattern is same as IDD4W  
Operating current  
(ACT-READ-PRE)  
mA  
-8E  
-6C  
IDD2P -6E  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
all banks idle;  
tCK = tCK (IDD);  
CKE is L;  
Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
Precharge power-  
down standby  
current  
mA  
mA  
mA  
mA  
mA  
mA  
-5C  
-4A  
-8E  
-6C  
IDD2Q -6E  
-5C  
40  
35  
35  
30  
30  
40  
35  
35  
30  
30  
35  
30  
30  
all banks idle;  
tCK = tCK (IDD);  
CKE is H, /CS is H;  
Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
Precharge quiet  
standby current  
-4A  
-8E  
-6C  
45  
40  
40  
35  
30  
45  
40  
40  
35  
30  
40  
35  
30  
all banks idle;  
tCK = tCK (IDD);  
CKE is H, /CS is H;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Idle standby current IDD2N -6E  
-5C  
-4A  
-8E  
-6C  
IDD3P-F -6E  
-5C  
40  
35  
35  
30  
30  
40  
35  
35  
30  
30  
35  
30  
30  
Fast PDN Exit  
MRS (12) = 0  
all banks open;  
tCK = tCK (IDD);  
CKE is L;  
Other control and address  
bus inputs are STABLE;  
Data bus inputs are  
FLOATING  
-4A  
Active power-down  
standby current  
-8E  
-6C  
IDD3P-S -6E  
-5C  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
Slow PDN Exit  
MRS (12) = 1  
-4A  
-8E  
-6C  
IDD3N -6E  
-5C  
90  
80  
80  
65  
55  
90  
80  
80  
65  
55  
80  
65  
55  
all banks open;  
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Active standby  
current  
-4A  
all banks open, continuous burst reads, IOUT = 0mA;  
BL = 4, CL = CL(IDD), AL = 0;  
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
-8E  
-6C  
IDD4R -6E  
-5C  
205  
175  
175  
145  
120  
225  
195  
195  
165  
140  
230  
190  
160  
Operating current  
(Burst read  
operating)  
mA  
mA  
-4A  
Data pattern is same as IDD4W  
all banks open, continuous burst writes;  
BL = 4, CL = CL(IDD), AL = 0;  
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
-8E  
-6C  
IDD4W -6E  
-5C  
205  
175  
175  
145  
120  
225  
195  
195  
165  
140  
245  
200  
170  
Operating current  
(Burst write  
operating)  
-4A  
Data Sheet E0852E50 (Ver. 5.0)  
8