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EDD1208ALTA-7A 参数 Datasheet PDF下载

EDD1208ALTA-7A图片预览
型号: EDD1208ALTA-7A
PDF下载: 下载PDF文件 查看货源
内容描述: 128 M位同步DRAM是双倍数据速率( 4 -银行, SSTL_2 ) [128 M-bit Synchronous DRAM with Double Data Rate (4-bank, SSTL_2)]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 78 页 / 1650 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD1204ALTA, EDD1208ALTA, EDD1216ALTA  
CBR (auto) refresh command  
Fig.7 CBR (auto) refresh  
command  
(/CS, /RAS, /CAS = Low, /WE, CKE = High)  
CLK  
This command is a request to begin the CBR (auto) refresh operation.  
The refresh address is generated internally.  
CKE  
/CS  
H
Before executing CBR (auto) refresh, all banks must be precharged.  
After this cycle, all banks will be in the idle (precharged) state and ready for a  
bank activate command.  
/RAS  
/CAS  
/WE  
During tRFC (refresh command to refresh or activate command period), the  
EDD12xxALTA cannot accept any other command.  
BA0, BA1  
A10  
Add  
Self refresh entry command  
Fig.8 Self refresh entry command  
(/CS, /RAS, /CAS, CKE = Low, /WE = High)  
CLK  
CKE  
After the command execution, self refresh operation continues while CKE  
remains low.  
/CS  
/RAS  
/CAS  
/WE  
When CKE goes high, the EDD12xxALTA will exit the self refresh mode.  
During self refresh mode, refresh interval and refresh operation are performed  
internally, so there is no need for external control.  
Before executing self refresh, all banks must be precharged.  
BA0, BA1  
A10  
Add  
Burst stop command  
Fig.9 Burst stop command  
(/CS, /WE = Low, /RAS, /CAS = High)  
This command can stop the current read burst operation.  
CLK  
CKE  
/CS  
H
/RAS  
/CAS  
/WE  
BA0, BA1  
A10  
Add  
13  
Preliminary Data Sheet E0136E30