EBE51RD8AJFA
AC Characteristics [DDR2-533, 400]
-5C
-4A
DDR2-400 (3-3-3)
Speed bin
DDR2-533 (4-4-4)
Parameter
Symbol
tRCD
tRP
min.
15
max.
min.
15
max.
Unit
ns
Notes
Active to read or write command delay
Precharge command period
15
15
ns
Active to active/auto-refresh command time tRC
60
55
ns
DQ output access time from CK, /CK
DQS output access time from CK, /CK
CK high-level width
tAC
−500
+500
+450
0.55
0.55
−600
−500
0.45
0.45
+600
+500
0.55
0.55
ps
tDQSCK −450
ps
tCH
tCL
0.45
0.45
tCK
tCK
CK low-level width
Min.
(tCL, tCH)
Min.
(tCL, tCH)
CK half period
tHP
tCK
ps
ps
Clock cycle time
(CL = 6)
3750
8000
5000
8000
(CL = 5)
(CL = 4)
(CL = 3)
tCK
tCK
tCK
3750
3750
5000
8000
8000
8000
5000
5000
5000
8000
8000
8000
ps
ps
ps
DQ and DM input hold time
(differential strobe)
tDH (base) 225
275
+25
150
+25
ps
5
4
DQ and DM input hold time
(single-ended strobe)
tDH1
–25
ps
(base)
DQ and DM input setup time
(differential strobe)
tDS (base) 100
ps
DQ and DM input setup time
(single-ended strobe)
tDS1
–25
ps
(base)
Control and Address input pulse width for
each input
tIPW
0.6
0.6
tCK
DQ and DM input pulse width for each input tDIPW
Data-out high-impedance time from CK,/CK tHZ
Data-out low-impedance time from CK,/CK tLZ
0.35
0.35
tCK
ps
tAC max.
tAC max.
tAC max.
tAC max.
tAC min.
tAC min.
ps
DQS-DQ skew for DQS and associated DQ
signals
tDQSQ
300
400
350
450
ps
DQ hold skew factor
tQHS
tQH
ps
ps
DQ/DQS output hold time from DQS
tHP – tQHS
tHP – tQHS
DQS latching rising transitions to associated
clock edges
tDQSS
−0.25
+0.25
−0.25
+0.25
tCK
DQS input high pulse width
DQS input low pulse width
DQS falling edge to CK setup time
DQS falling edge hold time from CK
Mode register set command cycle time
Write postamble
tDQSH
tDQSL
tDSS
0.35
0.35
0.2
0.2
2
0.35
0.35
0.2
0.2
2
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ps
tDSH
tMRD
tWPST
tWPRE
0.4
0.35
0.6
0.4
0.35
475
350
0.9
0.4
40
0.6
Write preamble
Address and control input hold time
Address and control input setup time
Read preamble
tIH (base) 375
tIS (base) 250
5
4
ps
tRPRE
tRPST
tRAS
0.9
0.4
45
1.1
1.1
tCK
tCK
ns
Read postamble
0.6
0.6
Active to precharge command
70000
70000
Data Sheet E1036E30 (Ver. 3.0)
19
ELPIDA [ ELPIDA MEMORY ]
