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EBE21EE8ABFA-4A-E 参数 Datasheet PDF下载

EBE21EE8ABFA-4A-E图片预览
型号: EBE21EE8ABFA-4A-E
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB无缓冲DDR2 SDRAM DIMM [2GB Unbuffered DDR2 SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 27 页 / 217 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE21EE8ABFA  
-5C  
533  
min.  
-4A  
400  
min.  
Frequency (Mbps)  
Parameter  
Symbol  
tRRD  
max.  
max.  
Unit  
ns  
Notes  
Active bank A to active bank B command  
period  
7.5  
7.5  
Four active window period)  
Write recovery time  
tFAW  
tWR  
37.5  
15  
37.5  
15  
ns  
ns  
Auto precharge write recovery + precharge  
time  
(tWR/tCK)+  
(tRP/tCK)  
(tWR/tCK)+  
(tRP/tCK)  
tDAL  
tCK  
1
Internal write to read command delay  
tWTR  
7.5  
10  
ns  
Internal read to precharge command delay tRTP  
7.5  
7.5  
ns  
Exit self refresh to a non-read command  
Exit self refresh to a read command  
tXSNR  
tRFC + 10  
200  
tRFC + 10  
200  
ns  
tXSRD  
tXP  
tCK  
Exit precharge power down to any non-read  
command  
2
2
tCK  
tCK  
tCK  
Exit active power down to read command  
tXARD  
tXARDS  
2
2
3
Exit active power down to read command  
(slow exit/low power mode)  
6 AL  
6 AL  
2, 3  
CKE minimum pulse width (high and low  
pulse width)  
tCKE  
3
3
tCK  
Output impedance test driver delay  
MRS command to ODT update delay  
tOIT  
0
0
12  
12  
0
0
12  
12  
ns  
ns  
tMOD  
Auto refresh to active/auto refresh command  
time  
tRFC  
127.5  
127.5  
ns  
Average periodic refresh interval  
(0°C TC +85°C)  
tREFI  
7.8  
3.9  
7.8  
3.9  
µs  
µs  
ns  
(+85°C < TC +95°C)  
tREFI  
Minimum time clocks remains ON after CKE  
asynchronously drops low  
tIS + tCK +  
tIH  
tIS + tCK +  
tIH  
tDELAY  
Notes: 1. For each of the terms above, if not already an integer, round to the next higher integer.  
2. AL: Additive Latency.  
3. MRS A12 bit defines which active power down exit timing to be applied.  
4. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the  
VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test.  
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the  
VIH(DC) level for a rising signal and VIL(DC) for a falling signal applied to the device under test.  
CK  
DQS  
/CK  
/DQS  
tIS  
tIH  
tIS  
tIH  
tDS tDH  
tDS tDH  
VDDQ  
VDDQ  
VIH (AC)(min.)  
VIH (DC)(min.)  
VREF  
VIH (AC)(min.)  
VIH (DC)(min.)  
VREF  
VIL (DC)(max.)  
VIL (AC)(max.)  
VSS  
VIL (DC)(max.)  
VIL (AC)(max.)  
VSS  
Input Waveform Timing 1 (tDS, tDH)  
Input Waveform Timing 2 (tIS, tIH)  
Preliminary Data Sheet E0907E10 (Ver. 1.0)  
21  
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