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EBE11UD8AEFA-6 参数 Datasheet PDF下载

EBE11UD8AEFA-6图片预览
型号: EBE11UD8AEFA-6
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB无缓冲DDR2 SDRAM DIMM ( 128M字× 64位, 2级) [1GB Unbuffered DDR2 SDRAM DIMM (128M words x 64 bits, 2 Ranks)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 22 页 / 193 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE11UD8AEFA-6  
-6E  
Frequency (Mbps)  
667  
min.  
0.35  
275  
200  
0.9  
Parameter  
Symbol  
tWPRE  
tIH  
max.  
Unit  
tCK  
ps  
Notes  
Write preamble  
Address and control input hold time  
Address and control input setup time  
Read preamble  
5
4
tIS  
ps  
tRPRE  
tRPST  
tRAS  
tRAP  
tRRD  
tWR  
1.1  
tCK  
tCK  
ns  
Read postamble  
0.4  
0.6  
Active to precharge command  
Active to auto-precharge delay  
Active bank A to active bank B command period  
Write recovery time  
45  
70000  
tRCD min.  
7.5  
ns  
ns  
15  
ns  
(tWR/tCK)+  
(tRP/tCK)  
Auto precharge write recovery + precharge time  
tDAL  
tCK  
1
Internal write to read command delay  
Internal read to precharge command delay  
Exit self refresh to a non-read command  
Exit self refresh to a read command  
tWTR  
tRTP  
7.5  
ns  
7.5  
ns  
tXSNR  
tXSRD  
tRFC + 10  
200  
ns  
tCK  
Exit precharge power down to any non-read  
command  
tXP  
2
tCK  
tCK  
tCK  
Exit active power down to read command  
tXARD  
tXARDS  
2
3
Exit active power down to read command  
(slow exit/low power mode)  
7AL  
2, 3  
CKE minimum pulse width (high and low pulse width) tCKE  
3
tCK  
ns  
Output impedance test driver delay  
tOIT  
0
12  
Auto refresh to active/auto refresh command time  
tRFC  
105  
ns  
Average periodic refresh interval  
(0°C TC +85°C)  
tREFI  
7.8  
3.9  
µs  
µs  
ns  
(+85°C < TC +95°C)  
tREFI  
Minimum time clocks remains ON after CKE  
asynchronously drops low  
tDELAY  
tIS + tCK + tIH  
Notes: 1. For each of the terms above, if not already an integer, round to the next higher integer.  
2. AL: Additive Latency.  
3. MRS A12 bit defines which active power down exit timing to be applied.  
4. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the  
VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test.  
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the  
VIH(DC) level for a rising signal and VIL(DC) for a falling signal applied to the device under test.  
CK  
DQS  
/CK  
/DQS  
tIS  
tIH  
tIS  
tIH  
tDS tDH  
tDS tDH  
VDDQ  
VDDQ  
VIH (AC)(min.)  
VIH (DC)(min.)  
VREF  
VIH (AC)(min.)  
VIH (DC)(min.)  
VREF  
VIL (DC)(max.)  
VIL (AC)(max.)  
VSS  
VIL (DC)(max.)  
VIL (AC)(max.)  
VSS  
Input Waveform Timing 1 (tDS, tDH)  
Input Waveform Timing 2 (tIS, tIH)  
Data Sheet E0721E10 (Ver. 1.0)  
16  
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