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EBE11UD8AEFA-6 参数 Datasheet PDF下载

EBE11UD8AEFA-6图片预览
型号: EBE11UD8AEFA-6
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB无缓冲DDR2 SDRAM DIMM ( 128M字× 64位, 2级) [1GB Unbuffered DDR2 SDRAM DIMM (128M words x 64 bits, 2 Ranks)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 22 页 / 193 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE11UD8AEFA-6  
DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V)  
Parameter  
Symbol Grade  
IDD0  
max.  
1000  
Unit  
mA  
Test condition  
Operating current  
(ACT-PRE)  
(Another rank is in IDD2P)  
one bank; tCK = tCK (IDD), tRC = tRC (IDD),  
tRAS = tRAS min.(IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Operating current  
(ACT-PRE)  
(Another rank is in IDD3N)  
IDD0  
IDD1  
1480  
1120  
mA  
mA  
one bank; IOUT = 0mA;  
BL = 4, CL = CL(IDD), AL = 0;  
Operating current  
(ACT-READ-PRE)  
tCK = tCK (IDD), tRC = tRC (IDD),  
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data pattern is same as IDD4W  
(Another rank is in IDD2P)  
Operating current  
IDD1  
1600  
160  
mA  
mA  
(ACT-READ-PRE)  
(Another rank is in IDD3N)  
all banks idle;  
tCK = tCK (IDD);  
CKE is L;  
Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
Precharge power-down  
standby current  
IDD2P  
all banks idle;  
tCK = tCK (IDD);  
CKE is H, /CS is H;  
Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
Precharge quiet standby  
current  
IDD2Q  
IDD2N  
400  
560  
mA  
mA  
all banks idle;  
tCK = tCK (IDD);  
CKE is H, /CS is H;  
Idle standby current  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
all banks open;  
Fast PDN Exit  
tCK = tCK (IDD);  
MRS(12) = 0  
CKE is L;  
IDD3P-F  
IDD3P-S  
640  
400  
mA  
mA  
Active power-down  
standby current  
Other control and address bus  
inputs are STABLE;  
Slow PDN Exit  
MRS(12) = 1  
Data bus inputs are FLOATING  
all banks open;  
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Active standby current  
IDD3N  
1120  
mA  
Operating current  
all banks open, continuous burst reads, IOUT = 0mA;  
BL = 4, CL = CL(IDD), AL = 0;  
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
IDD4R  
IDD4R  
IDD4W  
IDD4W  
1920  
2400  
1840  
2320  
mA  
mA  
mA  
mA  
(Burst read operating)  
(Another rank is in IDD2P)  
Operating current  
(Burst read operating)  
(Another rank is in IDD3N)  
Data pattern is same as IDD4W  
Operating current  
all banks open, continuous burst writes;  
BL = 4, CL = CL(IDD), AL = 0;  
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
(Burst write operating)  
(Another rank is in IDD2P)  
Operating current  
(Burst write operating)  
(Another rank is in IDD3N)  
tCK = tCK (IDD);  
Auto-refresh current  
(Another rank is in IDD2P)  
IDD5  
IDD5  
2240  
2720  
mA  
mA  
Refresh command at every tRFC (IDD) interval;  
CKE is H, /CS is H between valid commands;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Auto-refresh current  
(Another rank is in IDD3N)  
Data Sheet E0721E10 (Ver. 1.0)  
11  
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