CMOS Voltage detector with delay circuit and Manual Reset function
ELM73xxxxxA
Top=25°C
Unit Note*
ELM7330xxxA
Parameter
Detection voltage
1
Symbol
VdetN
Condition
Min.
2.964
Typ.
3.000
Max.
3.036
V
1
VdetN× VdetN× VdetN×
Hysteresis width
Vhys
V
1
0.02
0.06
0.26
0.08
0.80
6.0
Current consumption
Power voltage
Iss
Vdd
Vdd=4.0V
μA
V
2
1
0.8
IoutN1 Vdd=0.8V, Vds=0.4V
IoutN2 Vdd=1.0V, Vds=0.4V
0.01
0.50
0.80
0.50
2.50
2.30
mA
3-(1)
Output current
2
IoutP* Vdd=4.5V, Vds=0.4V
mA
μA
ms
μs
3-(2)
4
Leakage current
Delay time
Ileak Vdd=VLX=6.0V
tPLH Vdd=1.0V to 4.0V, Cex=4.7nF 22.1
tPHL Vdd=4.0V to 1.0V
0.1
29.9
3
26.0*
30
5
MR voltage High
MR voltage Low
MR pull-up resistance
Temperature
VmrH Vdd=6.0V
1.2
6
V
6
6
7
VmrL Vdd=3.5V
Rmr Vdd=4.0V
ΔVdetN
0.3
1
3
MΩ
±30
ppm/°C
characteristic of VdetN ΔTop
1. Note: test circuit No.,
*
2. IoutP is only applied to CMOS output products.
3. tPLH(typ.) is derived by using Cex from the following formula: tPLH(typ.)[ms]=5.532×Cex[nF].
Top=25°C
Unit Note*
ELM7340xxxA
Parameter
Detection voltage
1
Symbol
VdetN
Condition
Min.
3.952
Typ.
4.000
Max.
4.048
V
1
VdetN× VdetN× VdetN×
Hysteresis width
Vhys
V
1
0.02
0.06
0.26
0.08
0.80
6.0
Current consumption
Power voltage
Iss
Vdd
Vdd=5.0V
μA
V
2
1
0.8
IoutN1 Vdd=0.8V, Vds=0.4V
IoutN2 Vdd=1.0V, Vds=0.4V
0.01
0.50
0.80
0.50
2.50
2.30
mA
3-(1)
Output current
2
IoutP* Vdd=4.5V, Vds=0.4V
mA
μA
ms
μs
3-(2)
4
Leakage current
Delay time
Ileak Vdd=VLX=6.0V
tPLH Vdd=1.0V to 5.0V, Cex=4.7nF 22.1
tPHL Vdd=5.0V to 1.0V
0.1
29.9
3
26.0*
30
5
MR voltage High
MR voltage Low
MR pull-up resistance
Temperature
VmrH Vdd=6.0V
1.2
6
V
6
6
7
VmrL Vdd=4.5V
Rmr Vdd=5.0V
ΔVdetN
0.3
1
3
MΩ
±30
ppm/°C
characteristic of VdetN ΔTop
1. Note: test circuit No.,
*
2. IoutP is only applied to CMOS output products.
3. tPLH(typ.) is derived by using Cex from the following formula: tPLH(typ.)[ms]=5.532×Cex[nF].
Rev.1.1
16 - 6
ELM [ ELM ELECTRONICS ]
