CMOS Voltage detector with delay circuit and Manual Reset function
ELM73xxxxxA
■Electrical characteristics
Top=25°C
Unit Note*
ELM7322xxxA
Parameter
Detection voltage
1
Symbol
VdetN
Condition
Min.
2.170
Typ.
2.200
Max.
2.230
V
1
VdetN× VdetN× VdetN×
Hysteresis width
Vhys
V
1
0.02
0.04
0.26
0.08
0.80
6.0
Current consumption
Power voltage
Iss
Vdd
Vdd=3.2V
μA
V
2
1
0.8
IoutN1 Vdd=0.8V, Vds=0.4V
IoutN2 Vdd=1.0V, Vds=0.4V
IoutP* Vdd=3.0V, Vds=0.4V
Ileak Vdd=VLX=6.0V
tPLH Vdd=1.0V to 3.2V, Cex=4.7nF 22.1
tPHL Vdd=3.2V to 1.0V
0.01
0.50
0.60
0.50
2.50
1.90
mA
3-(1)
Output current
2
mA
μA
ms
μs
3-(2)
4
Leakage current
Delay time
0.1
29.9
3
26.0*
30
5
MR voltage High
MR voltage Low
MR pull-up resistance
Temperature
VmrH Vdd=6.0V
1.2
6
V
6
6
7
VmrL Vdd=2.7V
Rmr Vdd=3.2V
ΔVdetN
0.3
1
3
MΩ
±30
ppm/°C
characteristic of VdetN ΔTop
1. Note: test circuit No.,
*
2. IoutP is only applied to CMOS output products.
3. tPLH(typ.) is derived by using Cex from the following formula: tPLH(typ.)[ms]=5.532×Cex[nF].
Top=25°C
Unit Note*
ELM7327xxxA
Parameter
Detection voltage
1
Symbol
VdetN
Condition
Min.
2.668
Typ.
2.700
Max.
2.732
V
1
VdetN× VdetN× VdetN×
Hysteresis width
Vhys
V
1
0.02
0.05
0.26
0.08
0.80
6.0
Current consumption
Power voltage
Iss
Vdd
Vdd=3.7V
μA
V
2
1
0.8
IoutN1 Vdd=0.8V, Vds=0.4V
IoutN2 Vdd=1.0V, Vds=0.4V
IoutP* Vdd=4.5V, Vds=0.4V
Ileak Vdd=VLX=6.0V
tPLH Vdd=1.0V to 3.7V, Cex=4.7nF 22.1
tPHL Vdd=3.7V to 1.0V
0.01
0.50
0.80
0.50
2.50
2.30
mA
3-(1)
Output current
2
mA
μA
ms
μs
3-(2)
4
Leakage current
Delay time
0.1
29.9
3
26.0*
30
5
MR voltage High
MR voltage Low
MR pull-up resistance
Temperature
VmrH Vdd=6.0V
1.2
6
V
6
6
7
VmrL Vdd=3.2V
Rmr Vdd=3.7V
ΔVdetN
0.3
1
3
MΩ
±30
ppm/°C
characteristic of VdetN ΔTop
1. Note: test circuit No.,
*
2. IoutP is only applied to CMOS output products.
3. tPLH(typ.) is derived by using Cex from the following formula: tPLH(typ.)[ms]=5.532×Cex[nF].
Rev.1.1
16 - 5
ELM [ ELM ELECTRONICS ]
