Single N-channel MOSFET
ELM13416CA-S
5
5
1800
1800
V
=10V
VDS=10V
DS
1600
1600
I =6.5A
ID=6.5A
D
4
4
1400
1400
C
Ciss
iss
1200
1200
3
3
1000
1000
800
800
2
2
600
600
400
400
C
Coss
1
1
oss
200
200
C
Crss
rss
0
0
0
0
0
0
2
2
4
4
6
8
8
10
10
12
12
0
0
5
5
10
10
15
15
20
20
6
Q (nC)
Qg (nC)
V
(Volts)
VDS (Volts)
g
DS
Figure 7: Gate-Charge Characteristics
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
Figure 8: Capacitance Characteristics
10000
10000
100.0
100.0
T
=150�C
TJ(Max)=150�C
J(Max)
T =25�C
TA=25�C
10µs
10µs
A
1000
1000
10.0
10.0
R
RDD
S(O
limited
limited
S(O
N)
N)
100µs
100µs
1ms
1ms
100
100
1.0
1.0
10ms
10ms
100ms
100ms
10
10
0.1
0.1
T
TJJ(
=150�C
=150�C
ax)
ax)
(
M
M
10s
10s
DC
DC
TAA=25�C
T =25�C
1
1
0.0
0.0
0
0
.
.
0
0
0
0
0
0
0
0
1
1
0
0
.
.
0
0
0
0
1
1
0
0
.
.
1
1
10
10
1000
1000
0
0
.
.
0
0
1
1
0
0
.
.
1
1
1
1
10
10
100
100
V
VDD (Volts)
(Volts)
S
S
Pulse Width (s)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Figure 9: Maximum Forward Biased Safe
Ambient (Note F)
Ambient (Note F)
Operating Area (Note F)
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125�C/W
0.1
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
5 - 4
ELM-TECH [ ELM Technology Corporation ]
