Single N-channel MOSFET
ELM13416CA-S
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min.
20
Typ.
Max. Unit
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Idss Vds=20V, Vgs=0V
V
1
Zero gate voltage drain current
μA
5
Tj=55°C
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
±10
1.1
μA
V
0.4
30
0.7
A
16
22
22
30
26
34
Vgs=4.5V, Id=6.5A
Tj=125°C
Static drain-source on-resistance
Rds(on)
mΩ
Vgs=2.5V, Id=5.5A
18
Vgs=1.8V, Id=5A
Gfs Vds=5V, Id=6.5A
Vsd Is=1A, Vgs=0V
Is
21
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
50
S
V
A
0.62
1.00
2
Ciss
1295
160
87
1650 pF
Output capacitance
Coss Vgs=0V, Vds=10V, f=1MHz
Crss
pF
pF
kΩ
Reverse transfer capacitance
Gate resistance
Rg Vgs=0V, Vds=0V, f=1MHz
1.8
SWITCHING PARAMETERS
Total gate charge
Qg
10.0
4.2
nC
nC
nC
ns
Gate-source charge
Qgs Vgs=4.5V, Vds=10V, Id=6.5A
Gate-drain charge
Qgd
2.6
Turn-on delay time
td(on)
280.00
328.00
3.76
2.24
31
Turn-on rise time
tr
Vgs=4.5V, Vds=10V
ns
Turn-off delay time
td(off) Rl=1.54Ω, Rgen=3Ω
tf
ns
Turn-off fall time
ns
Body diode reverse recovery time
Body diode reverse recovery charge
NOTE :
trr
If=6.5A, dl/dt=100A/μs
41
ns
Qrr If=6.5A, dl/dt=100A/μs
6.8
nC
1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment
with Ta =25°C. The value in any given application depends on the user's specific board design.
2. The power dissipation Pd is based on Tj(Max)=150°C, using 10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency
and duty cycles to keep initial Tj=25°C.
4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted
on 1in2 FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA
curve provides a single pulse rating.
5 - 2
ELM-TECH [ ELM Technology Corporation ]
