Single N-channel MOSFET
ELM13416CA-S
■General description
■Features
ELM13416CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and operation
with gate voltages as low as 1.8V and internal ESD
protection is included.
• Vds=20V
• Id=6.5A (Vgs=4.5V)
• Rds(on) < 22mΩ (Vgs=4.5V)
• Rds(on) < 26mΩ (Vgs=2.5V)
• Rds(on) < 34mΩ (Vgs=1.8V)
• ESD protected
■Maximum absolute ratings
Parameter
Symbol
Limit
20
Unit
V
Note
Drain-source voltage
Gate-source voltage
Vds
Vgs
±
8
V
Ta=25°C
Ta=70°C
6.5
5.2
Continuous drain current
Pulsed drain current
Id
Idm
A
A
30
3
2
Ta=25°C
Ta=70°C
1.4
Power dissipation
Pd
W
°C
0.9
Junction and storage temperature range
Tj, Tstg
-55 to 150
■Thermal characteristics
Parameter
Symbol
Rθja
Typ.
Max.
90
Unit
Note
1
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
70
100
63
°C/W
°C/W
°C/W
Steady-state
Steady-state
125
80
1, 4
Rθjl
■Pin configuration
■Circuit
D
SOT-23(TOP VIEW)
3
Pin No.
Pin name
GATE
1
2
3
G
SOURCE
DRAIN
1
2
S
5 - 1
ELM-TECH [ ELM Technology Corporation ]
